Samsung Electronics Co., Ltd.

Hyunsil Oh

Hyunmog Park

Minhee Cho

Minwoo Song

Minsu Lee

Woobin Song

A semiconductor device includes: a substrate including an active region and a device isolation region; a flat plate structure formed on the substrate; an oxide semiconductor layer covering a top surface of the flat plate structure and continuously arranged on a top surface of the substrate in the active region and the device isolation region; a gate structure arranged on the oxide semiconductor layer and including a gate dielectric layer and a gate electrode; and a source/drain region arranged on both sides of the gate structure and formed in the oxide semiconductor layer, in which, when viewed from a side cross-section, an extending direction of the flat plate structure and an extending direction of the gate structure cross each other.

Growing community of inventors

Hwaseong-si, South Korea

Hyunsil Oh