Skhynix Inc.

Postech Academy-industry Foundation

Hyunsang Hwang

In Kyeong Yoo

Seungyeol Oh

Ji Yong Woo

A multi-level synaptic weight device having a 3D vertical cross-point structure according to an embodiment includes a multi-level conductance structure configured to couple any one of multiple word lines to any one of multiple bit lines. The conductance structure may include a multiplexer, configured to include multiple selector switches coupled in parallel to the word line and to select any one of the multiple parallel-coupled selector switches in response to an externally applied selection signal; a fixed resistor block including multiple fixed resistors coupled to the bit line; a cross-point block configured such that the multiple selector switches in the multiplexer and the multiple fixed resistors in the fixed resistor block intersect in a matrix form so as to be coupled to each other and each of the selector switches in the multiplexer has a unique number of cross-points; and a conductive plate on the fixed resistor block.

Multi-level synaptic weight device of vertical cross-point structure in three dimension and fabrication thereof

Provided are a two-terminal switching device having a bidirectional switching property, and a resistive memory cross-point array including the same. The two-terminal switching device includes a first electrode. A first tunneling barrier layer is disposed on the first electrode. An oxide semiconductor layer is disposed on the first tunneling barrier layer. A second tunneling barrier layer is disposed on the oxide semiconductor layer. A second electrode is disposed on the second tunneling barrier layer.

Two terminal switching device having bipolar switching property, method of fabricating the same, and resistive memory cross-point array having the same

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Daegu, South Korea

Hyunsang Hwang