Ocz Technology Group, Inc.

Ocz Storage Solutions Inc.

Hyunmo Chung

Hanmook Park

Bumsoo Kim

Yongsik Joo

Disclosed are a flash memory device and flash memory programming method that equalizes a wear-level. The flash memory device includes a memory cell array, an inversion determining unit to generate a programming page through inverting or not inverting a data page based on a number of '1's and '0's in the data page, a programming unit to store the generated programming page in the memory cell array; and a data verifying unit to read the programming page stored in the memory cell array, to restore the data page from the programming page according to whether an error exists in the read programming page, and to output the restored data page, and thereby can equalize a wear-level of a memory cell.

Flash memory device and flash memory programming method equalizing wear-level

A controller for a solid state disk is provided. The controller includes a storage module to store an index of at least one idle bank among a plurality of memory banks, and a control module to control an access to the at least one idle bank using the stored index. Here, the access to the at least one idle bank may be controlled based on a state of a channel corresponding to each of the at least one idle bank.

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Seongnam-si, South Korea

Hyunmo Chung