Samsung Display Co., Ltd.

Hyunmi Doh

Yunku Jung

Jaehoon Kim

Jaekook Ha

Changhee Lee

Sehun Kim

Dukki Kim

Hyojin Ko

Jae Hong Park

Minki Nam

Sungwoon Kim

Myoungjin Park

Junwoo Park

Dongwoo Shin

Jaehong Park

Kyoungwon Park

Yunhyuk Ko

YunHyuk Ko

Sooho Lee

A quantum dot composition includes a quantum dot, and a ligand bonded to a surface of the quantum dot, wherein the ligand includes a head portion bonded to the surface of the quantum dot and containing a polar solvent dissociative functional group, and a tail portion connected to the head portion. A quantum dot composition according to an embodiment is used to form an emission layer of a light emitting element to enhance luminous efficiency of the light emitting element including an emission layer formed through the quantum dot composition.

Method for manufacturing a light emitting element including a quantum dot composition

A light-emitting device includes a first electrode, an emission layer, an electron transport layer, a metal-nucleation inducing layer, and a second electrode. The metal-nucleation inducing layer is in direct contact with the second electrode, and includes a metal-nucleation inducing material having at least one metal-nucleation inducing group. The second electrode includes a metal-containing film that is hybridized with the metal-nucleation inducing material. The metal-nucleation inducing group is a π electron-deficient nitrogen-containing C-Ccyclic group that is unsubstituted or substituted with at least one Ror a group represented by one of Formulae 1A to 1E, and does not comprise a group represented by *—C(═O)(OH) and a cyano group. The emission efficiency and/or lifespan of the light-emitting device may be improved because of the metal-nucleation inducing layer.

Light-emitting device and apparatus including the same

A quantum dot composition includes a quantum dot having a surface to which a ligand is bonded, and a photoacid generator. The quantum dot composition according to one or more embodiments may be applied to an emission layer of a light emitting element and a display device, thereby improving luminous efficiency of the light emitting element.

Quantum dot composition, light emitting element, and method for manufacturing the same

A quantum dot composition includes a quantum dot having a surface to which a ligand is bonded, and a thermal decomposition auxiliary compound. The quantum dot composition may be applied to an emission layer of a light emitting element and a display device, thereby improving luminous efficiency of the light emitting element and the display device.

Provided is a light emitting element according to embodiments which includes a body including a semiconductor layer and an active layer, and a ligand including a head portion bonded to a surface of the body, an end portion spaced apart from the body, and having a positive or a negative charge, and a chain portion connecting the head portion and the end portion.

Light emitting element and display device including the same and method for manufacturing display device

Provided are a light-emitting device, an electronic apparatus including the same, and a method of manufacturing the light-emitting device, wherein the light-emitting device includes: a first electrode, a second electrode facing the first electrode, and an interlayer between the first electrode and the second electrode, wherein the interlayer includes an emission layer and an electron transport layer, the electron transport layer is between the emission layer and the second electrode, and the electron transport layer includes an electron transport particle, the electron transport particle includes a core and a shell covering the core, the core includes an oxide, a chalcogenide, or any combination thereof, and the shell includes a chalcogenide, the chalcogenide of the core being the same as or different from the chalcogenide of the shell.

Light-emitting device including electron transport particle, electronic apparatus including the same, and method of manufacturing the light-emitting device

A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an interlayer between the first electrode and the second electrode and including an emission layer, wherein the interlayer includes i) a hole transport region between the first electrode and the emission layer, and ii) an electron transport region between the emission layer and the second electrode, and the hole transport region includes a Group 11 metal chalcogenide compound including a Group 11 metal and a chalcogenide element with the proviso that oxygen is excluded from the chalcogenide element.

Light-emitting device including hole transport region containing group 11 metal chalcogenide compound

A quantum dot composition includes a quantum dot, and a ligand bonded to a surface of the quantum dot, wherein the ligand includes a head portion bonded to the surface of the quantum dot, a connecting portion connected to the head portion and including a metal, and a tail portion coordinated to the metal of the connecting portion. The quantum dot composition according to the present embodiments is used to form an emission layer of a light emitting element, and may thus increase service life and luminous efficiency of the light emitting element including the emission layer formed using the quantum dot composition.

Quantum dot composition including a quantum dot, and a ligand having a head portion, a connecting portion including a metal, and a tail portion

A quantum dot composition includes a quantum dot, a ligand to bind to a surface of the quantum dot, an additive having an amine group, and a precursor comprising an organometallic compound, the composition forming a modified quantum dot having a reformed surface characteristic. A light emitting element including the modified quantum dot may have improved lifespan, luminous efficiency, and material stability.

Quantum dot composition, light emitting element and display device including the same

Quantum dot composition including a ligand bonded to a surface of a quantum dot, light emitting element including an emission layer containing a quantum dot and ligand residues, and method for manufacturing the same

A quantum dot composition includes a quantum dot, and a ligand bonded to a surface of the quantum dot, wherein the ligand includes a body part including a charge transport moiety, and a head part bonded to the surface of the quantum dot. The quantum dot composition according may be applied to a light emitting diode and a display device to provide increased luminous efficiency and device life of the light emitting diode and the display device.

Quantum dot composition, light emitting diode and display device including the light emitting diode

A method for manufacturing a light emitting element includes: forming a first electrode; forming a hole transport region on a first electrode; forming an emission layer on the hole transport region; forming an electron transport region on the emission layer; and forming a second electrode on the electron transport region, wherein the forming of the emission layer includes providing a quantum dot composition containing a quantum dot and a ligand bonded to a surface of the quantum dot, to form a preliminary emission layer; and increasing the layer density of the preliminary emission layer by about 5% or greater, thereby improving a luminous efficiency of the light emitting element.

Method for manufacturing light emitting element including quantum dot in an emission layer

A light emitting device may include a first electrode, a second electrode opposite to the first electrode, and an emission layer disposed between the first electrode and the second electrode. The emission layer may include a manganese complex compound and a quantum dot. It is possible to improve life span and light emitting efficiency characteristics of the light emitting device.

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Seoul, South Korea

Hyunmi Doh