Samsung Electronics Co., Ltd.

Hyunkyo Oh

Youngdeok Seo

Heewon Lee

Woohyun Kang

Donghoo Lim

Sangkwon Moon

Hyuna Kim

Kangho Roh

Sanghyun Choi

Jisoo Kim

Jinbaek Song

Chanha Kim

Seungkyung Ro

Donggi Lee

Jin Gu Jeong

Oak-Ha Kim

Jin-Young Kim

Jinwook Lee

Jong-Nam Baek

Suhyun Kim

Se Hwan Park

Su Chang Jeon

Youngjun Hwang

Seongnam Kwon

Byeonghui Kim

Jinyoung Lee

Kibeen Jung

Yeonji Kim

Hee-Tai Oh

Sungmin Jang

Garam Kim

Byungkwan Chun

Youngjoo Seo

Han Kyoo Lee

A storage device according to an embodiment includes a memory device configured to apply a first program voltage and a first verification voltage to a first word line and output, based on a program state of each of a plurality of memory cells connected to the first word line, a speed information representing a speed characteristic of each of the plurality of memory cells; and a memory controller configured to determine at least one memory cell to be programmed into a predetermined program state; determine, among the at least one memory cell, at least one target memory cell having a first speed characteristic based on the speed information; and perform a state-shaping operation to convert a data corresponding to the predetermined program state for the at least one target memory cell into a value corresponding to a program state different from the predetermined program state.

Storage device for performing a state shaping operation on data based on a speed characteristic of a memory cell and operation method thereof

An operation method for controlling a nonvolatile memory device includes initiating a first instance of a respective reliability operation for a respective memory block included in the nonvolatile memory device. The respective reliability operation includes detecting a degradation level of the respective memory block and setting a respective skip reference value based on the detected degradation level. The operation method also includes determining whether a respective number of consecutively skipped instances of the respective reliability operation is less than the respective skip reference value. The operation method further includes selectively skipping or performing a next instance of the respective reliability operation based on the determination result.

Operation method of storage controller for nonvolatile memory device

A storage device includes a non-volatile memory device configured to store fast cell information obtained from a threshold voltage distribution formed through a one-shot program for memory cells; and a storage controller configured to read the fast cell information from the non-volatile memory device during booting or initialization to perform mapping a fast cell area based on a fast cell management policy, wherein the fast cell information is acquired through the one-shot program performed in a test stage or a mass production evaluation stage, and is stored in the non-volatile memory device before a firmware of the storage controller is executed.

Storage device having fast cell information and operation method thereof

A method of operating a non-volatile memory device, which is configured to communicate with a storage controller includes: receiving a first request indicating a read reclaim determination and including environment information from the storage controller, performing a first on-chip read operation for generating first distribution information based on the first request, determining whether a read reclaim is required based on the first distribution information, and providing the storage controller with a determination result having a first bit value in response to determining that the read reclaim is required.

Non-volatile memory device determining read reclaim, method of operating the same, and method of operating storage device including the same

Disclosed is a storage controller which includes a history table and communicates with a non-volatile memory device. A method of operating the storage controller includes determining whether history data of a target memory block are registered at the history table, providing a history read request for the target memory block based on the history data when it is determined that the history data are registered, receiving first raw data corresponding to the history read request from the non-volatile memory device, generating skew information of the target memory block based on the first raw data and the history data, and determining whether to perform a read reclaim operation of the target memory block, based on the skew information.

Storage controller using history data, method of operating the same, and method of operating storage device including the same

A throttling method for a storage device is provided. The throttling method includes: receiving a write command from a host; identifying, using a first machine learning model, a throttling delay time; transmitting a completion message to the host according to the throttling delay time; collecting weights of the first machine learning model and performance information of the storage device corresponding to the weights; learning the weights and the performance information to generate an objective function indicating a relationship between the weights and the performance information using a second machine learning model of a weight learning device; selecting a weight corresponding to a maximum performance using the objective function; and updating the first machine learning model with the weight.

Storage device, storage system and throttling method thereof

Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes providing a read command to the non-volatile memory device, receiving first read data and first distribution information corresponding to the read command from the non-volatile memory device, determining whether an error of the first read data is uncorrectable, and updating offset information of a history table in the storage controller based on the first distribution information, in response to determining that the error of the first read data is correctable.

Storage controller receiving read data and distribution information, method of operating the same, and method of operating storage device including the same

Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes outputting a first command including a request for on-chip valley search (OVS) count data of a memory region of the non-volatile memory device to the non-volatile memory device, wherein the OVS count data includes a first count value and a second count value of a first read voltage and a third count value and a fourth count value of a second read voltage, receiving the OVS count data from the non-volatile memory device, determining a distribution type of the memory region to be a predicted distribution type, from among a plurality of distribution types, based on the OVS count data, and determining a subsequent operation, based on the predicted distribution type.

Storage controller determining distribution type, method of operating the same, and method of operating storage device including the same

A method of measuring durability of a nonvolatile memory device that includes a plurality of memory blocks, the method including: periodically receiving a read command for a first memory block among the plurality of memory blocks; periodically performing a read operation on the first memory block based on the read command; periodically outputting at least one cell count value associated with the first memory block based on a result of the read operation; and periodically storing durability information associated with the first memory block in response to a periodic reception of the durability information, the durability information being obtained by accumulating the at least one cell count value.

Method of measuring durability of nonvolatile memory device and method of performing wear-leveling in storage device using the same

Provided are a storage system including a host and a storage device, and an operation method of the storage system. The storage device includes a memory controller and a memory device, where an operation method of the memory controller includes receiving from the host a first mode change request for a folder, which is a unit for managing at least one file, and a logical address of the at least one file, and in response to the first mode change request, rewriting to the memory device first data corresponding to the logical address in a second operating mode, and invalidating first data which is existing data already written to correspond to the logical address and the first data in a first operating mode, wherein the first mode change request sets a data operation speed to a high-speed mode for the at least one file included in the folder.

Storage system including host and storage device and operation method thereof

Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes outputting a first command including a request for on-chip valley search (OVS) count data of a memory region of the non-volatile memory device to the non-volatile memory device, wherein the OVS count data include a first count value of a first read voltage and a second count value of a second read voltage, receiving the OVS count data from the non-volatile memory device, determining a first error count value for the first read voltage and a second error count value for the second read voltage, based on the OVS count data, and determining a subsequent operation, based on the first and second error count values.

Storage controller determining error count, method of operating the same, and method of operating storage device including the same

A memory system includes a memory device including a plurality of blocks, a buffer storing degradation information regarding at least one of the plurality of blocks, and a memory controller configured to determine a degradation level of the block corresponding to the read request based on the degradation information, in response to a read request from a host, infer a read level corresponding to the read request based on the degradation level, and read data from the memory device based on the read level.

Memory system processing request based on inference and operating method of the same

A storage device includes a non-volatile memory including a plurality of blocks, a buffer memory that stores a plurality of on-cell counts, which are generated by reading memory cells connected to a plurality of reference word lines of the plurality of blocks by using a read level, and an artificial neural network model, and a controller that inputs an on-cell count corresponding to a target block among the plurality of on-cell counts and a number of a target word line of the target block to the artificial neural network model, and infers a plurality of read levels for reading data of memory cells connected to the target word line using the artificial neural network model.

Storage device inferring read levels based on artificial neural network model and learning method of artificial neural network model

An operation method of a storage controller which includes a nonvolatile memory device, the method including: collecting a first parameter indicating a degradation factor of a first memory area of the nonvolatile memory device and a second parameter indicating a degree of degradation occurring at the first memory area, in an initial driving period; selecting a first function model of a plurality of function models based on the first parameter and the second parameter and predicting a first error tendency of the first memory area based on the first function model; determining a first reliability interval based on the first error tendency; and performing a first reliability operation on the first memory area of the nonvolatile memory device based on the first reliability interval.

Operation method of a storage controller configured to control a nonvolatile memory device

A storage device includes a non-volatile memory including a plurality of blocks, a buffer memory, and a controller that stores an on-cell count in the buffer memory, the on-cell count indicating a number of memory cells, which are turned on by a read level applied to a reference word line of each of the plurality of blocks, from among memory cells connected to the reference word line.

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Yongin-si, South Korea

Hyunkyo Oh