Samsung Electronics Co., Ltd.

Hyunju Sung

Byungjoo Go

Heesung Kam

Hongsoo Kim

Sujin Park

Boram Im

Jongkook Park

Hose Choi

A semiconductor device includes a stack structure including interlayer insulating layers and horizontal layers on a lower structure; a memory vertical structure vertically penetrating the stack structure; first and second barrier structures penetrating the stack structure in parallel; a supporter pattern penetrating the stack structure; and through contact plugs penetrating the stack structure. The first barrier structure includes first barrier patterns arranged in a first direction and spaced apart from each other, and second barrier patterns arranged in the first direction and spaced apart from each other. Each of the first and second barrier patterns includes a linear shape extending in the first direction. In a first barrier pattern and a second barrier pattern adjacent to each other, a portion of the first barrier pattern opposes a portion of the second barrier pattern in a second direction perpendicular to the first direction.

Semiconductor device with vertical patterns and data storage system including the same

Semiconductor device, with support and barrier patterns in connection regions, and data storage system including the same

An integrated circuit memory device includes a plurality of row selection transistors and a dummy row selection transistor, on a substrate. A plurality of word lines and a plurality of dummy word lines are also provided on the substrate. A plurality of memory cells are provided, which are electrically connected to corresponding ones of the plurality of word lines. A plurality of dummy memory cells are provided, which are electrically connected to corresponding ones of the plurality of dummy word lines. A first wiring structure is provided, which electrically connects a first one of the plurality of word lines to a first one of the plurality of row selection transistors, and a second wiring structure is provided, which electrically connects the plurality of dummy word lines together and to the dummy row selection transistor.

Variable resistance memory devices

Growing community of inventors

Seoul, South Korea

Hyunju Sung