Lg Electronics Inc.

Other

Hyunjin Yang

Junghoon Choi

Heonmin Lee

Kwangsun Ji

Hojung Syn

Wonseok Choi

Jun Seok Lee

Youngjoo Eo

Ji Suk Choi

Heeyoung Lee

The present invention relates to lipid removed scaffolds(lipid-free scaffolds) for human tissue volume replacement or cell culture. More particularly, the present invention relates to a method for preparing lipid removed scaffolds(lipid-free scaffolds) for human tissue volume replacement or cell culture, the method comprising the steps of: fragmenting fat tissue to isolate lipids by ultrasonic treatment or high pressure nozzle spray; removing the isolated lipids and fat tissue from which lipids were not isolated to sterilize. According to the present invention, lipids are removed from fat tissue only by physical treatment to maintain the volume thereof and microstructures such as cellular membrane as much as possible and thus the inventive scaffolds are useful for human tissue volume replacement.

Lipid-free scaffolds for human volume replacement or cell culture and use thereof

A solar cell is discussed. The solar cell includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type that is positioned on the substrate, a first field region of the first conductive type that is positioned on the substrate to be separated from the emitter region, a first electrode electrically connected to the emitter region, a second electrode electrically connected to the first field region, and an insulating region positioned on at least one of the emitter region and the first field region.

Solar cell

A solar cell including a non-amorphous semiconductor substrate of a first conductive type; at least a first semiconductor layer on the non-amorphous semiconductor substrate, the first semiconductor layer including a portion that is amorphous and a plurality of portions having crystal lumps, so that the plurality of portions having the crystal lumps are distributed in the first semiconductor layer; a first electrode on the semiconductor substrate; and a second electrode on the semiconductor substrate.

A solar cell is discussed, and includes a substrate; a first field region; a first electrode directly formed on an emitter region; and a second electrode directly formed on a second field region, wherein a second passivation layer comprises a first back passivation portion and a second back passivation portion. Furthermore, the first back passivation portion is merely positioned between the emitter region and the substrate and the second field region and the substrate, and the second back passivation portion is positioned between the emitter region and the second field region, and wherein the first back passivation portion positioned between the emitter region and the substrate is physically separated from first back passivation portion positioned between the second field region and the substrate.

Solar cell and method for manufacturing the same

A back contact solar cell and a method for manufacturing the back contact solar cell are discussed. The back contact solar cell includes a substrate made of crystalline silicon having a first conductivity type, a passivation layer on one side of the substrate, an antireflection layer on the passivation layer, a first electrode on the other side of the substrate, a second electrode on the other side of the substrate and separated from the first electrode, a first semiconductor layer disposed between the first electrode and the substrate and having the first conductivity type, and a second semiconductor layer disposed between the second electrode and the substrate and having a second conductivity type that is opposite to the first conductivity type. The passivation layer includes at least one of amorphous silicon oxide and amorphous silicon carbide.

Back contact solar cell and manufacturing method thereof

A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a substrate that contains first impurities of a first conductive type and is formed of a crystalline semiconductor, a first field region that is positioned on an incident surface of the substrate and contains second impurities of a second conductive type, an emitter region that contains third impurities of a third conductive type, is formed of a non-crystalline semiconductor, and is positioned on a non-incident surface of the substrate opposite the incident surface of the substrate, a first electrode electrically connected to the emitter region, and a second electrode electrically connected to the substrate.

A three-dimensional cell culture method for increasing cell proliferation efficiency by suitably regulating the proliferation-inducing and proliferation-inhibitory signals between cells is provided. The method includes repeatedly performing any one or both of the following processes a) and b) so as to regulate proliferation-inducing and proliferation-inhibitory signals between the cells: a) a process of gradually adding the micro-scaffolds, in which a small amount of the micro-scaffolds are used in an initial stage in order to maintain a suitable distance between the cells, and the amount of the micro-scaffolds is then increased slowly according to cell proliferation rate; and b) a periodic shaking process, in which shaking is performed in order to separate connected cells from each other by a physical force, after the cells are incubated for more than a given period of time.

Growing community of inventors

Seoul, South Korea

Hyunjin Yang