Samsung Electronics Co., Ltd.

Dongjin Semichem Co., Ltd.

HyunJin Kim

Jeongdon Ihm

Dongku Kang

Seonkyoo Lee

Kyung-Min Kang

Kwang Won Kim

Jihyun Kim

Jangwoo Lee

Daehoon Na

Sukkoo Hong

Youngjin Jeon

Miyeong Kang

Jongkyoung Park

Hyojung Roh

Hyereun Kim

Jungyoul Lee

Kitae Park

Jindo Byun

ChaeHoon Kim

A polymer having a repeating unit represented by Formula 1:

Polymer and composition for forming an anti-reflective film and method of manufacturing an integrated circuit device using the anti-reflective film

A polymer having a repeating unit represented by Formula 1: 

A multi-mode transmission line includes a first and second conductive layers, first and second waveguide walls, a strip line, and a blind conductor. The second conductive layer that is formed over the first conductive layer. The first waveguide wall is elongated in a first direction and is in contact with the first conductive layer and the second conductive layer in a vertical direction. The second waveguide wall is elongated in the first direction parallel to the first waveguide wall and is in contact with the first conductive layer and the second conductive layer in the vertical direction. The strip line is formed between the first and second conductive layers and between the first and second waveguide walls. The blind conductor is connected to one of the first conductive layer, the second conductive layer, the first waveguide wall, or the second waveguide wall.

Multi-mode transmission line and storage device including the same

A nonvolatile memory device includes a memory cell array including first to fourth planes, a page buffer circuit that includes first to fourth page buffer units connected with the first to fourth planes, respectively, an input/output circuit that includes a first input/output unit connected with the first to fourth page buffer units and a second input/output unit connected with the second and fourth page buffer units, and control logic that controls the input/output circuit to output first data from one of the first to fourth page buffer units through the first input/output unit in a first read mode and output second data from one of the first and third page buffer units through the first input/output unit and third data from one of the second and fourth page buffer units through the second input/output unit in a second read mode.

Operating method of a storage device including a nonvolatile memory device and a controller

Nonvolatile memory device including a plurality of input/output units and an operating method thereof

An integrated circuit including first pads and second pads, a first receiver circuit and a first driver circuit respectively connected to the first pad, a second receiver circuit and a second driver circuit respectively connected to the second pad, and a first loopback circuit having a first input terminal electrically connected to the first receiver circuit, a first output terminal electrically connected to the first driver circuit, a second output terminal electrically connected to the second driver circuit, and a second input terminal electrically connected to the second receiver circuit may be provided. At a normal mode, the first loopback circuit electrically connects the first input terminal to the second output terminal and electrically connects the second input terminal to the first output terminal. At a test mode, the first loopback circuit electrically connects the first input terminal to the first output terminal.

Integrated circuit and storage device including integrated circuit

A solid state drive includes a nonvolatile memory, a random access memory, and a memory controller. The nonvolatile memory contains a plurality of nonvolatile memories chips and a buffer chip. The memory controller is formed of an internal bus, a host interface, a memory interface, a buffer control circuit, and a processor.

Solid state driving including nonvolatile memory, random access memory and memory controller

An integrated circuit includes an input/output pad, a driver circuit connected to the input/output pad, and a receiver circuit connected to the input/output pad, and a code generator. The driver circuit is configured to output an output signal to an external device through the input/output pad. The receiver circuit is configured to receive an input signal from the external device through the input/output pad. The code generator is configured to generate a termination code of the external device in response to a signal output from the receiver circuit.

Integrated circuit and storage device including the same

A storage device includes a nonvolatile memory, and a memory controller adapted to control the nonvolatile memory and to transmit a first timing signal to the nonvolatile memory at a read operation. The nonvolatile memory includes a nonvolatile memory device adapted to output read data and a second timing signal in response to the first timing signal, and a retiming circuit adapted to detect a locking delay according to the first timing signal, to produce a third timing signal from the second timing signal using the detected locking delay, to retime the read data by latching the read data in synchronization with the third timing signal and to output the third timing signal and the retimed read data to the memory controller.

Storage device including nonvolatile memory and memory controller and operating method of retiming circuit interfacing communication between nonvolatile memory and memory controller

Growing community of inventors

Hwaseong-si, South Korea

HyunJin Kim