Samsung Electronics Co., Ltd.

Hyunjae Kang

Junho Kim

Hyunwoo Lee

Youngwook Kim

Sangmin Kim

Jihun Lee

Sangkyung Lee

Iljong Song

Taemin Earmme

Seongkeun Cho

Eunhee Jeang

Gyumin Jeong

Sangchan Park

Sunyoung Lee

Dohyung Kim

Jinbum Kim

Seokhoon Kim

Sujin Jung

Sangjin Kim

Bonyoung Koo

Choeun Lee

Yang Xu

Byeongchan Lee

Hanki Lee

Kwanheum Lee

Jaeyoung Park

Yong-Jun Ahn

Chuljun Park

Taeseon Kim

Kanghun Moon

Jeonghun Lim

Hyukjun Sung

Jaehun Choi

Min Kyun Lee

Jaesung Byun

Junhyuk Chang

Yeojin Lee

Seunggyu Kang

Yoonjoong Oh

Kuang Woo Nam

In some embodiments, a method of manufacturing an integrated circuit device includes forming a feature structure on a substrate, forming a first hardmask configured to cover the feature structure, forming, on the first hardmask, a second hardmask comprising a plurality of first line portions extending lengthwise in a first horizontal direction and being apart from each other in a second horizontal direction perpendicular to the first horizontal direction, forming, on at least one of the first hardmask and the second hardmask, an etch mask pattern comprising a plurality of second line portions, forming, from the first hardmask, a first hardmask pattern comprising a plurality of third line portions, forming, from the second hardmask, a plurality of second hardmask patterns, and forming a feature pattern comprising a plurality of fourth line portions by etching the feature structure and using the plurality of second hardmask patterns and the first hardmask pattern.

Method of manufacturing integrated circuit device

According to an embodiment, a cassette storage case includes a body defining an internal storage space for a cassette. The body includes a lower body part, and a shield body part extending upward from an upper surface outer region of the lower body part. The shield body part has an opening in an upper portion thereof. A load protruding portion extends outward from an outer bottom surface of the lower body part, and has a shape that corresponds to a shape of the opening.

Cassette storage case and cassette management system including the same

A transfer apparatus according to the disclosure includes a mast portion including a base portion, and a protrusion portion protruding from the base portion, and a plurality of shuttles configured to move along the mast portion, thereby transferring a carrier. The mast portion includes a first magnet track fixed to a first sidewall of the protrusion portion, and a second magnet track fixed to a second sidewall of the protrusion portion. Each of the plurality of shuttles includes a first coil portion adjacent to the first magnet track in a horizontal direction, and a second coil portion adjacent to the second magnet track in the horizontal direction. The protrusion portion, the first magnet track, and the second magnet track are disposed between the first and second coil portions.

Parallel transfer apparatus

A method of fabricating a semiconductor device is disclosed. The method may include forming a parent pattern, forming an upper thin film on the parent pattern, forming a child pattern on the upper thin film, measuring a diffraction light from the parent and child patterns to obtain an intensity difference curve of the diffraction light versus its wavelength, and performing an overlay measurement process on the parent and child patterns using the diffraction light, which has the same wavelength as a peak of the intensity difference curve located near a peak of reflectance of the parent and child patterns, to obtain an overlay measurement value.

Method of fabricating a semiconductor device

A contactless integrated circuit (IC) card reader configured to communicate with a contactless IC card includes an antenna circuit, a variable amplifier that amplifies a carrier signal at an amplification gain and outputs the amplified carrier signal to the antenna circuit as a transmit signal, a variable attenuator that attenuates a receive signal received through the antenna circuit at an attenuation ratio, and a controller that controls the amplification gain and the attenuation ratio based on the attenuated receive signal.

Contactless card reading employing gain and attenuation control

A wireless communication device for detecting a card may include a signal generating circuit that generates a power signal for supplying a first power to a card, first communication signals for communicating with the card based on the first power, and a second communication signal for communicating with the card based on a second power supplied to the card, and a detecting circuit that detects a response signal received from the card, when the first communication signals or the second communication signal is output to the card. The signal generating circuit generates the first communication signals and the second communication signal such that the second power is supplied to the card by the first communication signals or the second communication signal.

Wireless communication device for detecting card

Disclosed is a near field communication device which includes an antenna, a transceiver that transmits and receives a wireless signal through the antenna, a first detection pulse generation circuit that transmits a first detection pulse to the transceiver periodically in a first detection interval, a second detection pulse generation circuit that transmits a second detection pulse to the transceiver in a second detection interval, a start of frame (SOF) detection circuit that detects whether an SOF is received from the transceiver, in the second detection interval, and a control block that determines that a second near field communication device is present, when the SOF detection circuit detects the SOF.

Near field communication device

A card reader performing a wireless communication with a card includes a first pulse generation unit generating a first detection pulse for detecting the card, a second pulse generation unit generating a plurality of second detection pulses for detecting the card, or a plurality of communication pulses for communicating with the card, and a card detection unit for sensing a card being detected by the first detection pulse or the second detection pulses. In the case that the card is not sensed through the first detection pulse, the second pulse generation unit generates the second detection pulses using the communication pulses and senses the card using the second detection pulses.

Card reader and method of operating the same

An electronic device includes a clock recovery circuit, a converter circuit, and a decoder circuit. The clock recovery circuit generates a reference clock. The converter circuit generates a conversion value that corresponds to a difference between a phase of reception data and a phase of the reference clock. The decoder circuit analyzes a reception characteristic of an antenna based on conversion values that corresponds to a start-of-frame (SOF) marker. The decoder circuit decodes a conversion value that corresponds to encoded data following the SOF marker in the reception data, with reference to the analyzed reception characteristic, into a digital value.

Communication circuit chip and electronic device configured to decode data with reference to reception characteristic analyzed based on start-of-frame pattern

A communication circuit chip includes a controller, a power manager, and a memory. The controller selectively communicates, based on a reception signal that is received through an antenna, with one memory card among first and second memory cards. The power manager transfers power, in response to receiving the reception signal through the antenna, to the one memory card that is selected to communicate with the controller. The memory stores content data such that content of data stored in each of the first and second memory cards is recognized. The controller selects the one memory card that is to communicate with the controller from among the first and second memory cards, with reference to the stored content data.

Communication circuit chip and electronic device configured to communicate with plural memory cards

A semiconductor device may include a fin active region including a lower fin active region surrounded by a device isolation layer and an upper fin active region protruding from a top surface of the device isolation layer, a gate pattern disposed on top and side surfaces of the upper fin active region, and a source/drain region formed in the fin active region located at a side of the gate pattern. The gate pattern extends onto the device isolation region. The source/drain region includes a trench and epitaxial layers that fill the trench. Sidewalls of the trench include first sidewalls and second sidewalls that connect the first sidewalls to a bottom surface of the trench. The bottom surface of the trench is located at a lower level than the top surface of the device isolation layer beneath the gate pattern, and the second sidewalls of the trench have inclined {111} planes.

Semiconductor device having stressor and method of fabricating the same

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Seoul, South Korea

Hyunjae Kang