Samsung Electronics Co., Ltd.

HyunHo Jung

Jeongyun Lee

GeumJung Seong

Kyungseok Min

Bora Lim

Seungsoo Hong

Youngmook Oh

Minchan Gwak

Jae-Hoon Woo

Jongchul Park

Cheol Jin Kim

Taesoon Duyeon Kwon

A-reum Ji

A semiconductor device includes a substrate having first and second active regions. A first active pattern is on the first active region and includes first source/drain patterns and a first channel pattern therebetween. A second active pattern is on the second active region and includes second source/drain patterns and a second channel pattern therebetween. A gate electrode includes a first gate electrode on the first channel pattern and a second gate electrode on the second channel pattern. A gate cutting pattern is between the first and second gate electrodes and separates the first and second gate electrodes from each other. A pair of gate spacers is on opposite sidewalls of the first gate electrode extending along opposite sidewalls of the gate cutting pattern towards the second gate electrode. The gate cutting pattern includes first to third parts having maximum widths that increase from the first to the third part.

Semiconductor device

A semiconductor device includes a first active pattern and a second active pattern on a substrate, a first gate electrode and a second gate electrode respectively across the first active pattern and the second active pattern, a first insulation pattern between and separating the first and second gate electrodes, a gate spacer on a sidewall of the first gate electrode, on a sidewall of the second gate electrode, and on a sidewall of the first insulation pattern, and a second insulation pattern between the gate spacer and the sidewall of the first insulation pattern, wherein the first gate electrode, the first insulation pattern, and the second gate electrode are arranged along a first direction, and wherein the gate spacer extends in the first direction.

Method of manufacturing a semiconductor device

Semiconductor device and method of manufacturing the same

A semiconductor device can include a first active pattern on a substrate, the first active pattern including a plurality of first active regions that protrude from the substrate. A second active pattern can be on the substrate including a plurality of second active regions that protrude from the substrate. A first gate electrode can include an upper portion that extends over the first active pattern at a first height and include a recessed portion that extends over the first active pattern at a second height that is lower than the first height of the first gate electrode. A second gate electrode can include an upper portion that extends over the second active pattern at a first height and include a recessed portion that extends over the second active pattern at a second height that is lower than the first height of the second gate electrode. An insulation pattern can be located between, and directly adjacent to, the recessed portion of the first gate electrode and the recessed portion of the second gate electrode, the insulation pattern electrically isolating the first and second gate electrodes from one another.

Semiconductor devices including recessed gate electrode portions

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Seoul, South Korea

HyunHo Jung