University of California

Ajou University Industry-Academic Cooperation Foundation

Hyungtak Seo

Sang Yeon Lee

Gabor A Somorjai

Jin Seo Kim

L Robert Baker

Antoine Hervier

A method for controlling an electric conductivity of a metal oxide thin film is disclosed. The method may include forming a metal oxide thin film; applying thermal treatment to the metal oxide thin film; and irradiating UV (ultraviolet)-rays to the metal oxide thin film in an atmosphere containing water molecules and oxygen molecules. Thus, the hydrogen may be doped into the metal oxide thin film to improve the electric conductivity of the metal oxide thin film.

Method of controlling electric conductivity of metal oxide thin film and thin film transistor including the metal oxide film having the controlled electric conductivity

A new composition of matter is disclosed wherein oxygen vacancies in a semiconducting transition metal oxide such as titanium dioxide are filled with a halogen such as Fluorine, whereby the conductivity of the composition is greatly enhanced, while at the same time the chemical stability of the composition is greatly improved. Stoichiometric titanium dioxide having less than 3 % oxygen vacancies is subject to fluorine insertion such that oxygen vacancies are filled, limited amounts of fluorine replace additional oxygen atoms and fluorine interstitially inserts into the body of the TiOcomposition.

Generation of highly N-type, defect passivated transition metal oxides using plasma fluorine insertion

Growing community of inventors

Seoul, South Korea

Hyungtak Seo