Samsung Electronics Co., Ltd.

Hyungsoon Jang

Hoon Lim

Youngho Lee

Jae Hong Kwon

Eunguk Chung

Heonjong Shin

Jongmil Youn

Kangwook Park

Sunil Yu

Steve Sunhom Paak

A semiconductor device includes first source/drain regions disposed at both sides of a first gate structure and including dopants of a first conductivity type, counter regions being in contact with upper portions of the first source/drain regions and under both end portions of the first gate structure, and first halo regions in contact with bottom surfaces of the first source/drain regions. The counter regions include dopants of a second conductivity type that is different from the first conductivity type. The first halo regions include dopants of the second conductivity type.

Semiconductor device and method of fabricating the same

A semiconductor device may include a semiconductor substrate; a test circuit array region; a pad region on the semiconductor substrate and at at least a first side of the test circuit array region and outside of the test circuit array region, transistors arranged in the test circuit array region in a first direction and a second direction perpendicular to the first direction, source lines spaced apart from each other in the second direction, each of the source lines extending in the first direction and electrically connected to corresponding source electrodes of the transistors, and drain lines spaced apart from each other in the second direction, each of the drain lines extending in the first direction and electrically connected to drain electrodes of the transistors.

Semiconductor device

Growing community of inventors

Hwaseong-si, South Korea

Hyungsoon Jang