Advanced Analogic Technologies Incorporated

Advanced Analogic Technologies (hong Kong) Limited

HyungSik Ryu

Richard Kent Williams

Donald Ray Disney

Wai Tien Chan

Jun-Wei Chen

An Electro-Static Discharge (ESD) protection device is formed in an isolated region of a semiconductor substrate. The ESD protection device may be in the form of a MOS or bipolar transistor or a diode. The isolation structure may include a deep implanted floor layer and one or more implanted wells that laterally surround the isolated region. The isolation structure and ESD protection devices are fabricated using a modular process that includes virtually no thermal processing. Since the ESD device is isolated, two or more ESD devices may be electrically 'stacked' on one another such that the trigger voltages of the devices are added together to achieve a higher effective trigger voltage.

ESD protection for bipolar-CMOS-DMOS integrated circuit devices

A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be used in combination with doped sidewall isolation regions. Both the trench and the sidewall isolation regions may be annular and enclose an isolated pocket of the substrate. The isolation structures are formed by modular implant and etch processes that do not include significant thermal processing or diffusion of dopants so that the resulting structures are compact and may be tightly packed in the surface of the substrate.

Modular methods of forming isolation structures for integrated circuits

Isolation structures for integrated circuits

All low-temperature processes are used to fabricate a variety of semiconductor devices in a substrate the does not include an epitaxial layer. The devices include a non-isolated lateral DMOS, a non-isolated extended drain or drifted MOS device, a lateral trench DMOS, an isolated lateral DMOS, JFET and depletion-mode devices, and P-N diode clamps and rectifiers and junction terminations. Since the processes eliminate the need for high temperature processing and employ 'as-implanted' dopant profiles, they constitute a modular architecture which allows devices to be added or omitted to the IC without the necessity of altering the processes used to produce the remaining devices.

High-voltage extended drain MOSFET

High-voltage lateral DMOS device

Growing community of inventors

San Jose, CA, United States of America

HyungSik Ryu