Skhynix Inc.

Micron Technology Incorporated

HyungSeok Kim

Fan Zhang

Yu Cai

Chenrong Xiong

Aman Bhatia

June Lee

David J Pignatelli

Sampath K Ratnam

Vamsi Pavan Rayaprolu

Patrick Robert Khayat

Jun Wan

Steven Michael Kientz

Zixiang Loh

Jaesung Sim

A system having a processing device operatively coupled with a memory device to perform the following operations: responsive to detecting a triggering event, measuring a temperature of the memory device to obtain a suspend temperature value, enabling a suspend temperature flag to indicate that temperature input for a step of an error handling operation is based on the suspend temperature value. Updating an operating temperature with the suspend temperature value. Determining, using a data structure which maps temperatures to read level offsets, a read level offset for the step of the error handling operation, based on the operating temperature. Causing the step of the error handling operation to be performed on a set of cells using a read level value based on the read level offset and a base read level, an disabling the suspend temperature flag.

Temperature sensor management during error handling operations in a memory sub-system

An example method of performing read operation comprises: receiving a read request with respect to a set of memory cells of a memory device; determining a value of a media endurance metric of the set of memory cells; determining a programing temperature associated with the set of memory cells; determining a current operating temperature of the memory device; determining a voltage adjustment value based on the value of the media endurance metric, the programming temperature, and the current operating temperature; adjusting, by the voltage adjustment value, a bitline voltage applied to a bitline associated with the set of memory cells; and performing, using the adjusted bitline voltage, a read operation with respect to the set of memory cells.

Cross-temperature compensation based on media endurance in memory devices

Disclosed are techniques for selecting one or more reference voltages for performing one or more operations on a memory cell based on a determined layer of a three-dimensional memory construct to which the memory cell belongs. The one or more operations can include read or write operations. The memory cell can be a flash memory cell.

Layer-based memory controller optimizations for three dimensional memory constructs

A memory device including a memory having a plurality of memory cells for storing data. The memory device includes a controller communicatively coupled to the memory and configured to organize the data as a plurality of stripes. Each individual stripe of the plurality of stripes includes a plurality of data groups, each of the plurality of data groups stored in the memory using a subset of the plurality of memory cells. Stripe lengths (number of data groups) for individual stripes are determined by the controller based on detecting a condition associated with one or more data groups of the plurality of data groups. At least one data group of the plurality of data groups for each of the individual stripes includes parity data for correcting bit errors associated with the subset of the plurality of memory cells for the individual stripe.

Modifiable stripe length in flash memory devices

An apparatus of a memory system and an operating method thereof includes a plurality of memory devices; and a controller coupled with the plurality of memory devices, configured to determine a range of read reference voltages having a plurality of read reference voltages, the read reference voltages achieving a minimal rBER; calculate an optimal read reference voltage in accordance with at least the range of read reference voltages; achieve a rBER in accordance with at least the optimal read reference voltage; and execute error correction process with at least the optimal read reference voltage.

Memory system of optimal read reference voltage and operating method thereof

Disclosed are techniques for determining a threshold number of read operations on memory depending on one or more conditions of the memory. If a number of read operations for the memory meets the threshold number of read operations, a read reclaim operation can be performed to preserve data stored therein.

Techniques for dynamically determining performance of read reclaim operations

A memory device for generating a mapping between one or more unusable columns and one or more backup columns within a memory. The memory includes a plurality of memory cells for storing data. The memory also includes a plurality of columns including a first subset of the plurality of memory cells. Each of the plurality of columns belongs to one of a plurality of data chunks. The memory further includes one or more backup columns including a second subset of the plurality of memory cells. The memory device also includes a controller communicatively coupled to the memory and configured to perform operations including identifying unusable columns, detecting a condition associated with each data chunk, and generating a mapping between the backup columns and the unusable columns based on the condition such that each of the backup columns is mapped to a different unusable column.

Growing community of inventors

Santa Clara, CA, United States of America

HyungSeok Kim