Globalwafers Co., Ltd.

Sunedison Semiconductor Limited

HyungMin Lee

Carissima Marie Hudson

Soubir Basak

Richard Joseph Phillips

Robert Wendell Standley

JaeWoo Ryu

Jae-Woo Ryu

Robert J Falster

Igor Peidous

ByungChun Kim

Hariprasad Sreedharamurthy

Gaurab Samanta

Nan Zhang

Parthiv Daggolu

Eric Michael Gitlin

YoungJung Lee

Kirk D McCallum

Methods for producing a product ingot from a silicon melt held within a crucible are disclosed. The methods involve evaluating one or more ingot puller apparatus to determine if the apparatus is capable of producing low oxygen content silicon product ingots. A sample rod is pulled from the silicon melt and the oxygen content of the sample rod is measured.

Methods for producing a product ingot having low oxygen content

Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed. In some embodiments, the ingots are characterized by a relatively high resistivity.

Methods for forming single crystal silicon ingots with improved resistivity control

Methods for forming single crystal silicon ingots with improved resistivity control are disclosed. The methods involve growth of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The sample rod is cropped to form a center slab. The resistivity of the center slab may be measured directly such as by a four-point probe. The sample rod or optionally the center slab may be annealed in a thermal donor kill cycle prior to measuring the resistivity, and the annealed rod or slab is irradiated with light in order to enhance the relaxation rate and enable more rapid resistivity measurement.

Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth

A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1&#xd7;10atoms/cmand/or germanium at a concentration of at least about 1&#xd7;10atoms/cm, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.

High resistivity single crystal silicon ingot and wafer having improved mechanical strength

A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1&#xd7;1014 atoms/cm3 and/or germanium at a concentration of at least about 1&#xd7;1019 atoms/cm3, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.

Methods for forming single crystal silicon ingots with improved resistivity control. The methods involve growth and resistivity measurement of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The resistivity of the sample rod may be measured directly by contacting a resistivity probe with a planar segment formed on the sample rod. The sample rod may be annealed in a thermal donor kill cycle prior to measuring the resistivity.

Sample rod growth and resistivity measurement during single crystal silicon ingot production

Methods for determining the resistivity of a polycrystalline silicon melt

An method for producing a silicon ingot includes melting polycrystalline silicon in a crucible enclosed in a vacuum chamber to form a melt, generating a cusped magnetic field within the vacuum chamber, dipping a seed crystal into the melt, withdrawing the seed crystal from the melt to pull a single crystal that forms the silicon ingot, wherein the silicon ingot has a diameter greater than about 150 millimeters (mm), and simultaneously regulating a plurality of process parameters such that the silicon ingot has an oxygen concentration less than about 5 parts per million atoms (ppma). The plurality of process parameters include a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt.

Growing community of inventors

Cheonan-si, South Korea

HyungMin Lee