Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Yonsei University

Thinkware Corporation

Postech Academy-industry Foundation

Postech Research and Business Development Foundation

Lg Electronics Inc.

Applied Materials, Inc.

Lg Display Co., Ltd.

Samsung Sdi Co., Inc.

Ajou University Industry-Academic Cooperation Foundation

Squeezebits Inc.

Hyungjun Kim

Soyoung Koo

David P Thompson

Sungmin Kim

Chan Kwak

Byoungki Choi

Changsoo Lee

Jae-Joon Kim

Myungsun Sim

Yulhwa Kim

Jun Hyung Lim

Doh Won Jung

Daejin Yang

Taekyu Han

Kyungjin Jeon

Jinseok Kim

Ohyun Kwon

Sangdong Kim

Junhyung Lim

Eoksu Kim

Myounghwa Kim

Sangwoo Sohn

Euncheol Do

Bumwoo Park

Virendra Kumar Rai

Byungjoon Kang

Jong Wook Roh

Kyuyoung Hwang

Seungyeon Kwak

Kum Hee Lee

Jooho Lee

Sunghun Lee

Taesang Kim

Giyoung Jo

Geunchul Park

Hyelim Choi

Joon Seok Park

Sungho Kim

Yongsung Kim

Woojin Lee

Chang Soo Lee

Yeon Keon Moon

Yong Joo Lee

Banglin Lee

Eok Su Kim

Ki Hong Kim

Jongwoo Sun

Jeoungin Yi

Joonseok Park

Yeonkeon Moon

Youngjin Cho

Jeffrey W Anthis

Youngjun Kim

Cheheung Kim

Ho-Jin Kim

Sangho Park

Soonok Jeon

Sangmo Kim

Yongsik Jung

Yeonsook Chung

Jinhong Kim

Chong Sup Chang

Jongwon Choi

Joonghyuk Kim

Dalho Huh

Sooghang Ihn

Taesu Kim

Yongsuk Cho

Su-Hyoung Kang

Sangwon Shin

Takayoshi Sasaki

Kyung Jin Jeon

Miyoung Chae

Tae Sang Kim

Atif Noori

Myounggeun Cha

Youngki Hong

Yoonho Khang

Yongchul Kim

Changoh Jeong

Hye Lim Choi

YongBaek Lee

Ilyoung Han

Yasushi Koishikawa

Dusik Park

Steven C Hung

ChoongKeun Yoo

Boeun Park

Young Jun Kim

Yong Jun Park

Jongsoo Lee

Yong-Young Noh

Youngnam Kwon

Yasuo Ebina

Honglong Ning

Yong-hee Cho

Jin Kon Kim

Young Eun Lee

Jeongil Bang

Seung Yun Yang

Provided are a light-emitting device and an electronic apparatus including the same. The light-emitting device includes a first electrode, a second electrode facing the first electrode, and an emission layer between the first electrode and the second electrode, wherein the first electrode is a reflective electrode, the emission layer includes i) a first emission layer, ii) a second emission layer, or a combination thereof, wherein when the first emission layer and the second emission layer are both present, then the second emission layer is located between the first emission layer and the second electrode, the first emission layer includes a first compound capable of emitting first light having a first spectrum, λP(1) is an emission peak wavelength (nm) of the first spectrum, the second emission layer includes a second compound capable of emitting second light having a second spectrum, λP(2) is an emission peak wavelength (nm) of the second spectrum, the emission layer may emit third light having a third spectrum, λP(3) is an emission peak wavelength (nm) of the third spectrum, λP(1) is less than λP(2), |λP(1)−λP(2)| is greater than 0 nm and less than or equal to 30 nm, and each of |λP(2)−λP(3)| and |λP(3)−λP(1)| is greater than or equal to 0 nm and less than or equal to 30 nm.

Light-emitting device and electronic apparatus including the same

A capacitor may include a first thin-film electrode layer; a second thin-film electrode layer; and a dielectric layer between the first thin-film electrode layer and the second thin-film electrode layer. The first thin-film electrode layer and the second thin-film electrode layer may include a conductive perovskite-type crystal structure. The dielectric layer may include a metal oxide having a dielectric perovskite-type crystal structure. The dielectric layer may be an epitaxial layer. The metal oxide may include a first element in a cubooctahedral site, a second element in an octahedral site, and a third element in an octahedral site. A valency of the third element may be lower than a valency of the second element, and the third element may be a dopant.

Capacitor, and device comprising the same, and method of preparing the same

An organometallic compound represented by Formula 1:M(Ln)(L)  Formula 1wherein Mis a first-row transition metal of the Periodic Table of Elements, a second-row transition metal of the Periodic Table of Elements, or a third-row transition metal of the Periodic Table of Elements, Lnis a bidentate ligand, n1 is 0, 1, or 2, and Lnis a ligand represented by Formula 1A:

Organometallic compound, organic light-emitting device including the same, and electronic apparatus including the organic light-emitting device

The disclosure relates to a method and an apparatus for lightweighting of artificial intelligence models, and a method of performing matrix multiplication of weight values and input values of artificial intelligence models includes copying quantized weight values stored in a global memory to a register, dequantizing the quantized weight values, copying an input value matrix to the register, and performing matrix multiplication between a dequantized weight value matrix and the input value matrix.

Method and apparatus for lightweighting of artificial intelligence model using dequantization

A display apparatus includes: an organic light emitting diode (OLED) structure including in which at least one blue light-emitting unit and at least one green light-emitting unit are stacked to provide incident light in which the blue incident light and the green incident light are mixed; a first pixel, a second pixel, and a third pixel disposed on the OLED structure; color conversion layers disposed on at least two of the first, the second, or the third pixels, and including quantum dots for converting the mixed incident from the OLED structure into light of a predetermined color; and first, second, and third color filters disposed on the first, the second, and the third pixels, respectively, to absorb or block light of a predetermined wavelength band, wherein a conversion value of an area of a spectrum in a wavelength region of 380 nanometers to 780 nanometers of the green incident light with respect to a difference between a wavelength at the maximum transmittance of the second color filter and the medial wavelength of the incident green light (Δλ) may be 3.6 or greater and 13 or less.

Display apparatus

A capacitor includes a lower electrode including a perovskite material, an upper electrode spaced apart from the lower electrode, a dielectric layer positioned between the lower electrode and the upper electrode and including a perovskite material, and a passivation layer positioned between the lower electrode and the dielectric layer and including SrTiOin which a content of Ti is greater than a content of Sr.

Capacitor, method of fabricating the capacitor, and electronic device including the capacitor

An organometallic compound represented by Formula 1:M(Ln)(Ln)  Formula 1

Organometallic compound, organic light-emitting device including the same, and diagnostic composition including the organometallic compound

Provided are an organometallic compound, an organic light-emitting device including the organometallic compound, and an electronic apparatus including the organic light-emitting device, in which the organometallic compound may be represented by Formula 1-1:

Organometallic compound, organic light-emitting device including organometallic compound, and electronic apparatus including organic light-emitting device

Disclosed is a neural network accelerator including a first bit operator generating a first multiplication result by performing multiplication on first feature 5 bits of input feature data and first weight bits of weight data, a second bit operator generating a second multiplication result by performing multiplication on second feature bits of the input feature data and second weight bits of the weight data, an adder generating an addition result by performing addition based on the first multiplication result and the second multiplication result, a shifter shifting a number 10 of digits of the addition result depending on a shift value to generate a shifted addition result and an accumulator generating output feature data based on the shifted addition result.

Neural network accelerator

Provided are a thin film structure, a capacitor including the thin film structure, a semiconductor device including the thin film structure, and a method of manufacturing the thin film structure, in which the thin film structure may include: a first electrode thin film disposed on a substrate and including a first perovskite-based oxide; and a protective film disposed on the first electrode thin film and including a second perovskite-based oxide that is oxygen-deficient and includes a doping element. The thin film structure may prevent the deterioration of conductivity and a crystalline structure of a perovskite-based oxide electrode, which is a lower electrode, even in a high-temperature oxidizing atmosphere for subsequent dielectric film deposition.

Thin film structure including method of manufacturing

A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of ABOthat has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein 'A' is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The ABOmaterial may be NaNbOin which bandgap energy thereof is greater than that of STO. The ABOmaterial may have relative density that is greater than 90% or more.

Ternary paraelectric material with space group Cc and method of manufacturing the same

A thin film transistor includes a gate electrode, an insulating layer disposed on the gate electrode, and an active layer disposed on the insulating layer, where the active layer includes a perovskite compound represented by the following Formula: ABC[XY], where A is a monovalent organic cation, a monovalent inorganic cation, or any combination thereof, B is Sn, C is a divalent cation or trivalent cation, X is a monovalent anion, Y is a monovalent anion different from X, u is a real number greater than 0 and less than 1, and v is a real number greater than 0 and less than 1.

Thin film transistor comprising a low lead content halide anion perovskite and display device including the thin film transistor

A display apparatus is disclosed that includes contact holes formed to expose at least a portion of a conductive layer or a semiconductor layer without damage to the surface of the conductive layer or the semiconductor layer, and a method of manufacturing the display apparatus. The display apparatus includes a substrate, a conductive mound arranged on the substrate, a first insulating mound arranged on the substrate, and a semiconductor layer including a first region arranged on the conductive mound, and a second region arranged on the first insulating mound. The second region of the semiconductor layer substantially covers an upper surface of the first insulating mound.

Display apparatus and method of manufacturing the same

A display device includes a first transistor including a first transistor including a light blocking pattern on a substrate, an active pattern on the light blocking pattern, and a gate electrode on the active pattern, a second transistor configured to provide a data voltage to the first transistor in response to a gate signal, and a storage capacitor electrically connected to the gate electrode and the light blocking pattern, and including a first conductive pattern in a same layer as the light blocking pattern, a second conductive pattern on the first conductive pattern and overlapping the first conductive pattern, a third conductive pattern in a same layer as the gate electrode, overlapping the second conductive pattern, and electrically connected to the first conductive pattern, and a fourth conductive pattern on the third conductive pattern, overlapping the third conductive pattern, and electrically connected to the second conductive pattern.

Display device and method of manufacturing the same

Disclosed are a first memory cell, a second memory cell, and a summing circuit. The first memory cell outputs only one of a first voltage through a first bit line and a second voltage through a second bit line, based on first input data received through a first word line and a second word line and a first weight. The second memory cell outputs only one of a third voltage through the first bit line and a fourth voltage through the second bit line, based on second input data received through a third word line and a fourth word line and a second weight; and the summing circuit generates an output voltage having a level corresponding to a sum of a level of a voltage received through the first bit line and a level of a voltage received through the second bit line.

Electronic device for configuring neural network

Growing community of inventors

Seoul, South Korea

Hyungjun Kim