Kioxia Corporation

Hyungjun Cho

Kazuya Sawada

Kenichi Yoshino

Naoki Akiyama

Takuya Shimano

According to one embodiment, a magnetic memory device includes a plurality of memory cells each including a magnetoresistance effect element and a switching element provided on a lower layer side of the magnetoresistance effect element and connected in series to the magnetoresistance effect element. The switching element includes a bottom electrode, a top electrode and a switching material layer provided between the bottom electrode and the top electrode, and the top electrode includes a first portion formed of a first material and a second portion provided on a lower layer side of the first portion and formed of a second material different from the first material.

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Seoul, South Korea

Hyungjun Cho