Lg Display Co., Ltd.

Korea Advanced Institute of Science and Technology

HyungJoon Koo

PilSang Yun

SeHee Park

Jaeyoon Park

Kwanghwan Ji

HongRak Choi

HeeJung Hong

Jongwon Yu

Sooji Lee

Kyoungsub Oh

A thin film transistor and a method for manufacturing the same, and a display device including the same are disclosed, in which a P type semiconductor characteristic is realized using an active layer that includes a Sn based oxide. The thin film transistor comprises an active layer that includes an Sn(II)O based oxide; a metal oxide layer being in contact with one surface of the active layer; a gate electrode overlapped with the active layer; a gate insulating film provided between the gate electrode and the active layer; a source electrode being in contact with a first side of the active layer; and a drain electrode being in contact with a second side of the active layer.

Thin film transistor and method for manufacturing the same, and display device including the same

Disclosed are a transistor assembly, an organic light emitting display panel including the same, and an organic light emitting display device including the organic light emitting display panel, in which a first electrode of a switching transistor is used as a gate of a driving transistor.

Transistor assembly, and organic light emitting display panel and organic light emitting display device including the same

Disclosed are an oxide thin film transistor (TFT), a method of manufacturing the same, a display panel including the oxide TFT, and a display device including the display panel, in which a crystalline oxide semiconductor is provided on a metal insulation layer including metal through a metal organic chemical vapor deposition (MOCVD) process. The oxide TFT includes a metal insulation layer including metal, a crystalline oxide semiconductor adjacent to the metal insulation layer, a gate including metal, a gate insulation layer between the crystalline oxide semiconductor and the gate, a first conductor in one end of the crystalline oxide semiconductor, and a second conductor in another end of the crystalline oxide semiconductor.

Oxide thin film transistor, method of manufacturing the same, and display panel and display device including the oxide thin film transistor

Disclosed is a thin film transistor substrate which facilitates to realize a bottom gate structure where a gate electrode is disposed below an active layer, and to increase an area for a storage capacitor, and a display device including the same, wherein the thin film transistor substrate may include a light shielding layer, a buffer layer for covering the light shielding layer, and a driving transistor prepared on the buffer layer while being overlapped with the light shielding layer, and provided to supply a driving current to an organic light emitting device.

Thin film transistor substrate and display device including the same

Disclosed are a transistor substrate, an organic light emitting display panel including the same, a method of manufacturing the transistor substrate, and an organic light emitting display device including the organic light emitting display panel, in which a driving transistor and a switching transistor are provided and each include an oxide semiconductor of which both ends are covered by an insulation layer, and a gate of the driving transistor and a gate of the switching transistor are provided on different layers.

Transistor substrate, and organic light emitting display panel including the same having a coupled driving gate and switching channel

A slot antenna and an information terminal apparatus using the same are provided. The slot antenna comprises: a conductive housing; and at least one slot formed on the corner and edge of the conductive housing.

Growing community of inventors

Seoul, South Korea

HyungJoon Koo