Lg Electronics Inc.

Hyungjin Kwon

Junghoon Choi

Ilhyoung Jung

Indo Chung

Youngsung Yang

Jeongbeom Nam

Jinah Kim

Juhong Yang

Changseo Park

Jonghwan Kim

Seunghwan Shim

Chungyi Kim

Daeyong Lee

Dohwan Yang

Hyunjung Park

A method for manufacturing a solar cell, the method includes forming a tunneling layer on a semiconductor substrate; forming a semiconductor layer on the tunneling layer, wherein the forming of the semiconductor layer includes depositing a semiconductor material; forming a capping layer on the semiconductor layer; and forming an electrode connected to the semiconductor layer, wherein the tunneling layer is formed under a temperature higher than room temperature and a pressure lower than atmospheric pressure, wherein a pressure of the forming of the semiconductor layer is smaller than the pressure of the forming of the tunneling layer, wherein the forming of the semiconductor layer further comprises doping the semiconductor layer with dopants, and wherein the capping layer is formed between the forming of the semiconductor layer and the forming of the electrode.

Solar cell and method for manufacturing the same

Discussed is a solar cell including a semiconductor substrate, a tunneling layer formed on one surface of the semiconductor substrate, a first conductive semiconductor layer formed on a surface of the tunneling layer and a second conductive semiconductor layer formed on the surface the tunneling layer. A separation portion separates the first and second conductive semiconductor layers from each other, and is formed on the surface of the tunneling layer at a location corresponding to at least a portion of a boundary between the first and second conductive semiconductor layers.

A method of manufacturing a solar cell, the method includes forming a protective film over a semiconductor substrate, the semiconductor substrate including a base area of a first conductive type and formed of crystalline silicon, wherein the forming of the protective film includes a heat treatment process performed at a heat treatment temperature of approximately 600 degrees Celsius or more under a gas atmosphere including nitrogen, and wherein the heat treatment process includes: a main section, during which the heat treatment temperature is maintained, a temperature increase section before the main section, during which an increase in temperature occurs from an introduction temperature to the heat treatment temperature, and a temperature reduction section after the main section, during which a decrease in temperature occurs from the heat treatment temperature to a discharge temperature.

Method of manufacturing solar cell

Discussed is a method for manufacturing a solar cell. The method includes forming a tunneling layer on a semiconductor substrate; forming a semiconductor layer on the tunneling layer, wherein the forming of the semiconductor layer including depositing a semiconductor material; and forming an electrode connected to the semiconductor layer. The tunneling layer is formed under a temperature higher than room temperature and a pressure lower than atmospheric pressure.

Disclosed is a method of manufacturing a solar cell. The method includes forming a protective film using an insulation film over a semiconductor substrate, the semiconductor substrate including a base area of a first conductive type and formed of crystalline silicon. The forming of the protective film includes a heat treatment process performed at a heat treatment temperature of 600 degrees Celsius or more under a gas atmosphere including a halogen gas, which has a halogen element.

A solar cell can include a substrate of a first conductive type; an emitter region of a second conductive type opposite the first conductive type and which forms a p-n junction along with the substrate; an anti-reflection layer positioned on the emitter region; a front electrode part electrically connected to the emitter region; and a back electrode part electrically connected to the substrate, wherein the substrate including a first area formed of single crystal silicon and a second area formed of polycrystalline silicon, wherein a thickness of the anti-reflection layer positioned on the first area is less than a thickness of the anti-reflection layer positioned on the second area, wherein a roughness of an incident surface of the substrate in the first area is different from a roughness of the incident surface of the substrate in the second area, and wherein the emitter region is entirely formed on the incident surface of the substrate.

Solar cell

A solar cell and a method of manufacturing the same are disclosed. The solar cell includes a substrate of a first conductive type; an emitter layer of a second conductive type opposite the first conductive type on the substrate; a first electrode electrically connected to the emitter layer; a passivation layer on the substrate; a second electrode conductive layer on the passivation layer, the second electrode conductive layer including at least one second electrode electrically connected to the substrate through the passivation layer; and a second electrode current collector electrically connected to the second electrode conductive layer.

Solar cell and method of manufacturing the same

A solar cell includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type and which forms a p-n junction along with the substrate, an anti-reflection layer positioned on the emitter region, a front electrode part electrically connected to the emitter region, and a back electrode part electrically connected to the substrate. The substrate includes a first area formed of single crystal silicon and a second area formed of polycrystalline silicon. A thickness of the anti-reflection layer positioned in the first area is less than a thickness of the anti-reflection layer positioned in the second area.

A solar cell includes a substrate of a first conductive type, an emitter region, which is positioned at the substrate and is doped with impurities of a second conductive type opposite the first conductive type, a plurality of first electrodes, which are connected to the emitter region and extend parallel to one another to be spaced apart from one another, a plurality of semiconductor electrodes, which extend in a direction different from an extension direction of the plurality of first electrodes to be spaced apart from one another and have an impurity doping concentration higher than the emitter region, and a second electrode connected to the substrate. A distance between two adjacent semiconductor electrodes is about 0.02 cm to 0.2 cm, and a distance between two adjacent first electrodes is about 0.3 cm to 0.8 cm.

A solar cell and a method of manufacturing the same are disclosed. The solar cell includes a substrate of a first conductive type; an emitter layer of a second conductive type opposite the first conductive type; at least one first electrode on the emitter layer and electrically connected to the emitter layer; a passivation layer on the substrate, the passivation layer including a plurality of exposing portions to expose respective portions of the substrate; and an electrode conductive layer on the passivation layer, the electrode conductive layer including a plurality of second electrodes electrically connected to the respective plurality of exposing portions, wherein in each of the plurality of exposing portions, an area of an exposed surface of the substrate is greater than an area of a virtual interface that is coplanar with an interface between the substrate and the passivation layer and which is located over the exposed surface.

A method for manufacturing a solar cell includes forming an impurity doped region of a second conductive type at a substrate of a first conductive type, sequentially irradiating laser shots onto the impurity doped region of the substrate to form an emitter part including a first emitter region having a first sheet resistance and a second emitter region having a second sheet resistance less than the first sheet resistance, and forming a plurality of first electrodes connected to the second emitter region and forming a second electrode connected to the substrate.

Growing community of inventors

Seoul, South Korea

Hyungjin Kwon