Samsung Electronics Co., Ltd.

Hyungi Hong

Kook Tae Kim

Soojin Hong

Jingyun Kim

Changhwa Kim

Sang-Su Park

Kwansik Kim

Yoonkyoung Kim

Mangeun Cho

Image sensors are provided. An image sensor includes a substrate including a plurality of pixel areas. The substrate has a first surface and a second surface that is opposite the first surface. The image sensor includes a deep pixel isolation region extending from the second surface of the substrate toward the first surface of the substrate and separating the plurality of pixel areas from each other. The image sensor includes an amorphous region adjacent a sidewall of the deep pixel isolation region. Moreover, the image sensor includes an electron suppression region between the amorphous region and the sidewall of the deep pixel isolation region.

Image sensors including an amorphous region and an electron suppression region

A method of fabricating an image sensor is provided. The method includes comprises forming a deep trench in a semiconductor substrate, performing a first plasma doping process to form a first impurity region a portion of in the semiconductor substrate adjacent to inner sidewalls and a bottom surface of the deep trench, the first impurity region being doped with first impurities of a first conductivity type, and performing an annealing process to diffuse the first impurities from the first impurity region into the semiconductor substrate to form a photoelectric conversion part.

Method of fabricating image sensor

Growing community of inventors

Seongnam-si, South Korea

Hyungi Hong