Samsung Electronics Co., Ltd.

Hyungho Ko

Jaehyuck Choi

Inkyun Shin

Jong Keun Oh

JunYoul Choi

Hyosan Lee

Changki Hong

Sangjun Choi

Woosung Han

Donggyun Han

A photomask and a method of forming the same, the photomask including a transparent substrate; a light shielding pattern on the transparent substrate, the light shielding pattern including molybdenum and silicon; and an etch stop layer covering at least a sidewall of the light shielding pattern, wherein the etch stop layer has an etch rate lower than an etch rate of the light shielding pattern with respect to an ammonia-based cleaning solution.

Method of forming photomask

Photomask and method of forming the same

An apparatus and method for removing photoresist from a substrate, which includes treating the photoresist with a first reactant to cause swelling, cracking or delamination of the photoresist, treating the photoresist with a second reactant to chemically alter the photoresist, and subsequently removing the chemically altered photoresist with a third reactant. In one example, the first reactant is supercritical carbon dioxide (SCCO), the second reactant is ozone vapor, and the third reactant is deionized water.

Apparatus and method for removing photoresist from a substrate

Growing community of inventors

Hwaseong-si, South Korea

Hyungho Ko