Electronics and Telecommunications Research Institute

Hyung-Sup Youn

Hyung-Moo Park

Chul-Soon Park

Jin-Hee Lee

Sang-Soo Choi

Hyung-Jun Yoo

A method for making a T-shaped gate of a field effect transistor is disclosed. The method includes the steps of sequentially depositing first and second photoresist layers on a semiconductor substrate and performing an exposure using electron beams having different energy, one of the electron beams having a first energy to lightly expose only the second photoresist layer and the other of the electron beams having a second energy to lightly expose all of the first and second layers. The invention reduces gate resistance and parasitic capacitance of the T-shaped gate.

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Daejeon, South Korea

Hyung-Sup Youn