Skhynix Inc.

Hyung-Suk Lee

Sook-Joo Kim

Jae-Geun Oh

Do-yeon Kim

Keum-Bum Lee

Sang-Soo Kim

Jung-Hyun Kang

Young-Ju Lee

An electronic device may include a semiconductor memory, and the semiconductor memory may include a substrate; an interlayer dielectric layer formed over the substrate and patterned to include a contact hole; a lower contact structure formed over the substrate in the contact hole; and a variable resistance element formed over and electrically coupled to the lower contact structure, wherein the lower contact structure comprises: a spacer formed on sidewalls of the contact hole in the interlayer dielectric layer and including a material having a lower etch rate than that of silicon nitride (SiN); a contact plug filling a portion of the contact hole; and a contact pad formed over the contact plug and filling a remaining portion of the contact hole.

Electronic device having a lower contact structure with sidewall spacers

This technology provides an electronic device. An electronic device in accordance with an implementation of this document may include a semiconductor memory for storing data, and the semiconductor memory may include a substrate; an interlayer dielectric layer over the substrate and patterned to include a contact hole; a lower contact structure formed over the substrate in the contact hole; and a variable resistance element formed over and electrically coupled to the lower contact structure, wherein the lower contact structure may include: a spacer formed on sidewalls of the contact hole in the interlayer dielectric layer and having a substantially uniform thickness along a direction perpendicular to a surface of the substrate; a contact plug filling a portion of the contact hole; and a contact pad formed over the contact plug and filling a remaining portion of the contact hole.

Electronic device and method for fabricating the same

Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a substrate including a first region and a second region separated from the first region; an interlayer dielectric layer formed over the substrate including first and second regions; a first contact plug located over the first region and formed through the interlayer dielectric layer; a second contact plug located over the second region and formed through the interlayer dielectric layer, wherein the first and the second contact plugs having different structures in the first and second regions, respectively; and a variable resistance element formed over the interlayer dielectric layer over the first region so as to be in contact with the first contact plug.

An electronic device comprising a semiconductor memory unit that includes a resistance variable element formed over a substrate, and including stacked therein a bottom electrode, a variable resistance layer and a top electrode, and a barrier layer formed over the resistance variable element, and including an amorphous silicon layer which is doped with at least one kind of impurity.

An electronic device including a semiconductor memory is provided. The semiconductor memory may include an interlayer dielectric layer having a hole; a conductive pattern filled in the hole; and a variable resistance element coupled with the conductive pattern over the conductive pattern and storing different data according to a resistance change, wherein the conductive pattern includes a carbon-containing conductive layer in a region adjacent to the variable resistance element.

Electronic device

An electronic device includes a semiconductor memory unit that includes: a gate including at least a portion buried in a substrate; a junction portion formed in the substrate on both sides of the gate; and a memory element coupled with the junction portion on one side of the gate, wherein the junction portion includes: a recess having a bottom surface protruded in a pyramid shape; an impurity region formed in the substrate and under the recess; and a contact pad formed in the recess.

Electronic device having a transistor with increased contact area and method for fabricating the same

An electronic device with improved variable resistance characteristics and a method for fabricating the same are provided. In an embodiment of the disclosed technology, a method for forming an electronic device with a semiconductor memory includes forming a crystalized doped layer over a substrate; forming a barrier layer over the doped layer; forming a metal layer over the barrier layer; and reacting the barrier layer with a portion of the metal layer. The electronic device and the method of fabricating the same according to embodiments of the disclosed technology may have improved variable resistance characteristics.

An electronic device may include a semiconductor memory. The semiconductor memory may include a substrate including a first region and a second region; buried gates formed in the first region and the second region, the buried gates in the second region having a different density distribution from the buried gates in the first region; first and second junction regions formed in the first and second regions, respectively, and having a same depth as each other; and a variable resistance element formed over the substrate and electrically connected to the buried gates in the first region. According to the implementations, the characteristics of the variable resistance element can be improved.

Growing community of inventors

Icheon-si, South Korea

Hyung-Suk Lee