Lg Philips Lcd Co., Inc.

Hyung Sik Seo

Byung Chul Ahn

Chang Dong Kim

Hoe Sup Soh

Duk Chul Yun

Jae Beom Choi

Jae Boom Choi

A semiconductor device includes a substrate and a first layer of a first conductive material on the substrate, the first layer having a first etching rate. A second layer of a second conductive material has a first hole on a portion of the first layer, the second layer having a second etching rate higher than the first etching rate. A third layer includes a combination of the first and second layers between the first and the second layers, the third layer having a third etching rate lower than the second etching rate. An insulating layer has a second hole on the third layer, the insulating layer having a fourth etching rate higher than the first etching rate. A transparent conductive layer is on the third layer through the first and second holes.

Growing community of inventors

Kyunggi-do, South Korea

Hyung Sik Seo