Samsung Electronics Co., Ltd.

Hyung-Sik Hong

Gyeong-Su Keum

Chung-Hun Park

Byung-Ho Min

Dong-Wha Shin

Jae-Hong Choi

Sang-Mun Chon

Seung-Ki Chae

Eun-Seok Song

Yun-sik Yang

Kyue-Sang Choi

Wan-Goo Hwang

Jae-Han Park

Gyeong-su Keum

Doo-Guen Song

Tae-Sub Im

Jae-Im Yun

Jae-Hyun Han

Hyun-Kyu Kang

Gum-Hyun Shin

Byoung-Sik Jung

Ki-Cheol Choi

Hae-Keun Youn

Gum-Chan An

Sang-Yeob Cha

Gil-Jung Yun

In an ion implanting apparatus and an ion implanting method using the same, the ion implanting apparatus includes a disk chamber containing a rotatable disk, a wafer mounted on the rotatable disk, and a charge sensor for monitoring a charged state of the wafer, the charge sensor being fixed to the disk chamber to be adjacent to and facing a surface of the wafer. An output of the charge sensor may be used as feedback to control the charged state of the wafer.

Ion implanting apparatus and ion implanting method using the same

A method and an apparatus for precisely exposing a predetermined width of a peripheral area of a wafer coated with a layer of photoresist material with light from a light source, wherein the wafer is moved when the light is radiated onto the wafer to expose the photoresist layer at the peripheral area of the wafer, an inspection section inspecting whether the light is radiated onto a precise position of the peripheral area of the wafer, whereby by adjusting the position of the light source if the light is not radiated at the precise position of the peripheral area of the wafer requiring exposure while inspecting the light radiated onto the peripheral area of the wafer, the predetermined width of the peripheral area of the wafer is precisely exposed.

Method for exposing a peripheral area of a wafer and apparatus for performing the same

A polarity exchanger and ion implanter include a stripping canal for passing an ion beam therethrough, a gas supply unit for providing a stripping gas into the stripping canal to change a polarity of the ion beam, a gas circulation unit for circulating the stripping gas, a flow meter for measuring a flow rate of the stripping gas, an ammeter for measuring a driving current applied to the gas circulation unit for operating the gas circulation unit, and a monitoring unit for generating a control signal to control a process for changing the polarity of the ion beam in accordance with the measured flow rate of the stripping gas and the measured driving current. The polarity exchanger and ion implanter having the polarity exchanger may prevent generation of metallic contaminants caused by a flow rate variation of the stripping gas or deterioration of a component of the gas circulation unit.

Polarity exchanger and ion implanter having the same

A method and an apparatus for measuring an inclination angle of an ion beam when ions are implanted into a semiconductor wafer include an ion current measuring section having a Faraday cup assembly which is rotatably installed, an angle varying section for adjusting an alignment angle of the Faraday cup assembly, and an inclination angle measuring section for measuring the inclination angle of the ion beam based on a variation of the ion current caused by a variation of the alignment angle of the Faraday cup assembly. By measuring the inclination angle of the ion beam, the incident angle of the ion beam, which is incident into the wafer during the ion implantation process, can be precisely adjusted to a predetermined critical angle. Accordingly, the channeling effect and shadow effect can be effectively prevented. The amount of the ions included in the ion beam can be precisely measured, so the amount of ions implanted into the wafer can be precisely adjusted.

Method and apparatus for measuring inclination angle of ion beam

A heater assembly of a semiconductor device manufacturing apparatus minimizes a temperature difference between a peripheral portion and a central portion of the wafer being processed in the apparatus. The heater assembly includes a unitary resistive heating member in the form of a disc, heat blocks that divide the peripheral portion and central portion of the upper surface of the disc into respective heating sections, a support for supporting the heating member, and an electric power source for supplying electric current to the unitary heating member. The widths of the heating sections become greater towards the center of the heater, and thus the electrical resistance of the heater also increases in a direction towards the center of the heater. The power source for the heater includes a lead that extends from the bottom surface of the heater to a bottom portion of the heater support.

Heater assembly for heating a wafer

An apparatus for use in orienting an object at a reference angle includes a pin gauge having at least two projections located at an end of the body of the apparatus. The projections are located at certain X Y coordinates of an X, Y Z Cartesian coordinate system. A horizontal support supports the body so as to be movable horizontally in the longitudinal direction of the projections. A mechanical drive member is operable to move the body mechanically in the horizontal direction. The apparatus may also include a vertical support and vertical drive member. The pin gauge is mechanically moved into contact with a surface of an object to provide a reference angle for the object. Then the object is pivoted, if necessary, to bring the surface into point contact with all of the projections of the pin gauge, whereupon the object is oriented at the reference angle. Process errors in aligning the object using the reference angle are reduced because the orienting of the object at the reference angle is accomplished using mechanical elements.

Method of and apparatus for use in orienting an object at a reference angle

A parameter monitoring apparatus for a high voltage chamber in a semiconductor wafer processing system monitors parameters in the high voltage chamber in real time by converting an electrical signal generated from the high voltage chamber into an optical signal using an electro-optical converter. The optical signal is then converted back into an electrical signal again by an opto-electrical converter. The parameters can be monitored in real time without damaging measurement devices, since they are not influenced by the potential difference between the high voltage chamber and the measurement device.

Real time parameter monitoring apparatus for high voltage chamber in semiconductor wafer processing system

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Hyung-Sik Hong