Skhynix Inc.

Korea Kumho Petrochemical Co., Ltd.

Hyung-Seok Kim

Suk-Won Jang

Ho-Soo Hwang

Sung-Soo Kim

Suk-Min Choi

Provided are a semiconductor memory device has improved read disturbance characteristics as well as improved retention characteristics at a high temperature, and a reading method thereof. The non-volatile semiconductor memory device includes at least one bit line; and a cell string configured to be coupled with the bit line respectively, and include normal memory cells and dummy memory cells that are alternately coupled with each other, where normal data are programmed and read to and from the normal memory cells, and dummy memory cells are programmed with dummy data.

Non-volatile semiconductor memory device and reading method thereof

A system for producing carbon nanotubes includes a reaction chamber in which a process is performed for producing a carbon nanotube on a synthetic substrate; a station part disposed at one side of the reaction chamber and provided with a first transporter for loading/unloading the synthetic substrate to/from the reaction chamber; a first transporter installed inside the station part for loading/unloading synthetic substrates to/from the reaction chamber; a substrate accommodating part in which a substrate to be loaded to the reaction chamber is accommodated or a synthetic substrate unloaded from the reaction chamber waits; a retrieve part for drawing out a synthetic substrate from the substrate accommodating part to retrieve a carbon nanotube produced on the synthetic substrate; a catalyst coating unit configured for coating a synthetic substrate with a catalyst before the synthetic substrate is accommodated in the substrate accommodating part of the station part; and a second transporter for transporting a synthetic substrate between the retrieve part and the substrate accommodating part and between the catalyst coating unit and the substrate accommodating part.

Growing community of inventors

Gyeonggi-do, South Korea

Hyung-Seok Kim