Stats Chippac Pte. Ltd.

Hyung Sang Park

SungWon Cho

KiYoun Jang

YongHee Kang

Sung Soo Kim

A semiconductor device has a first substrate and first conductive pillars formed over the first substrate. Second conductive pillars are formed over the first substrate alternating with the first conductive pillars. The second conductive pillars are vertically offset with respect to the first conductive pillars. First BOT interconnect sites are formed over a second substrate. Second BOT interconnect sites are formed over the second substrate alternating with the first interconnect sites. The second interconnect sites are vertically offset with respect to the first interconnect sites. The first substrate is mounted to the second substrate such that the first conductive pillars are aligned with and electrically connected to the first interconnect sites and the second conductive pillars are aligned with and electrically connected to the second interconnect sites. An underfill material is deposited between the first and second substrates. The first substrate can be a flipchip type semiconductor device.

Semiconductor device and method of forming vertically offset conductive pillars over first substrate aligned to vertically offset BOT interconnect sites formed over second substrate

A semiconductor device includes a first carrier having a first resin disposed over the first carrier. A fabric is disposed over the first resin. A second resin is formed over the first resin and around the fabric to form an asymmetrical pre-impregnated (PPG) substrate. The first carrier is removed. A second carrier is provided and a first conductive layer is formed over the second carrier. A portion of the first conductive layer is removed. The first conductive layer is transferred from the second carrier to the first resin. The first conductive layer is oriented asymmetrically such that the first conductive layer is offset with respect to the fabric to minimize warpage. The second carrier is removed. A via is formed through the second resin and fabric to expose the first conductive layer. A second conductive layer formed in the via over the first conductive layer.

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Kyoung-gi-Do, South Korea

Hyung Sang Park