Asm Genitech Korea Ltd.

Hyundai Motor Company

Asm IP Holding B.v.

Isac Research Inc.

Kia Motors Corporation

Genitech, Inc.

Asm Korea Ltd.

Hyung Sang Park

Yong Min Yoo

Jong Su Kim

Jeong Ho Lee

Seung Woo Choi

Dong Rak Jung

Chun Soo Lee

Tae Ho Yoon

Chae Woong Kim

Suvi P Haukka

Atsuki Fukazawa

Antti Niskanen

Naoki Inoue

Naoto Tsuji

Woong Pyo Hong

Noboru Takamure

Ki Jong Kim

Jung Soo Kim

Won Yong Koh

Julien Beynet

Jung Yeon Park

Kwang Gi Lee

Min Sub Oh

Hyun Seok Cha

Ji Hwa Lee

Hak Yong Kwon

Su Han Song

Provided are powder atomic layer deposition (ALD) equipment capable of increasing deposition uniformity of powder by using a gas supply sequence with or without an impeller or a vibration generator, and a gas supply method thereof, the powder ALD equipment including a process chamber having an accommodation space therein to accommodate powder, a gas supplier for sequentially supplying a plurality of gases to the powder, and a gas exhauster for exhausting, to outside, the gases discharged from the process chamber, wherein the gas supplier includes a gas supply plate, a first gas supply line, a first valve, edge valves, and a gas supply sequence controller.

Powder atomic layer deposition equipment and gas supply method therefor

Methods of depositing a silicon oxide film are disclosed. One embodiment is a plasma enhanced atomic layer deposition (PEALD) process that includes supplying a vapor phase silicon precursor, such as a diaminosilane compound, to a substrate, and supplying oxygen plasma to the substrate. Another embodiment is a pulsed hybrid method between atomic layer deposition (ALD) and chemical vapor deposition (CVD). In the other embodiment, a vapor phase silicon precursor, such as a diaminosilane compound, is supplied to a substrate while ozone gas is continuously or discontinuously supplied to the substrate.

Method of depositing silicon oxide films

The present disclosure relates to a trap device for a powder coating apparatus. The trap device includes a body part including an inlet through which exhaust gas containing lost powder is introduced, an outlet through which the exhaust gas is discharged, and an interior space in communication with the inlet and the outlet and a trap part that is located in the interior space of the body part and that traps the lost powder contained in the exhaust gas by a magnetic force.

Trap device for powder coating apparatus

Semiconductor patterns are formed by performing trimming simultaneously with the process of depositing the spacer oxide. Alternatively, a first part of the trimming is performed in-situ, immediately before the spacer oxide deposition process in the same chamber in which the spacer oxide deposition is performed whereas a second part of the trimming is performed simultaneously with the process of depositing the spacer oxide. Thus, semiconductor patterns are formed reducing PR footing during PR trimming with direct plasma exposure.

Method of forming semiconductor patterns

A method for forming a silicon-containing dielectric film on a substrate by atomic layer deposition (ALD) includes: providing two precursors, one precursor containing a halogen in its molecule, another precursor containing a silicon but no halogen in its molecule, adsorbing a first precursor, which is one of the two precursors onto a substrate to deposit a monolayer of the first precursor; adsorbing a second precursor, which is the other of the two precursors onto the monolayer of the first precursor to deposit a monolayer of the second precursor; and exposing the monolayer of the second precursor to radicals of a reactant to cause surface reaction with the radicals to form a compound monolayer of a silicon-containing film.

Method for forming Si-containing film using two precursors by ALD

A deposition apparatus according to an exemplary embodiment of the present invention is a lateral-flow deposition apparatus in which in which a process gas flows between a surface where a substrate is disposed and the opposite surface, substantially in parallel with the substrate. The lateral-flow deposition apparatus includes: a substrate support that moves up/down and rotates the substrate while supporting the substrate; a reactor cover that defines a reaction chamber by contacting the substrate support; and a substrate support lifter and a substrate support rotator that move the substrate support.

Lateral-flow deposition apparatus and method of depositing film by using the apparatus

A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate.

Deposition apparatus

Cyclical methods of depositing a ruthenium layer on a substrate are provided. In one process, initial or incubation cycles include supplying alternately and/or simultaneously a ruthenium precursor and an oxygen-source gas to deposit ruthenium oxide on the substrate. The ruthenium oxide deposited on the substrate is reduced to ruthenium, thereby forming a ruthenium layer. The oxygen-source gas may be oxygen gas (O). The ruthenium oxide may be reduced by supplying a reducing agent, such as ammonia (NH) gas. The methods provide a ruthenium layer having good adherence to an underlying high dielectric layer while providing good step coverage over structures on the substrate. After nucleation, subsequent deposition cycles can be altered to optimize speed and/or conformality rather than adherence.

Methods of depositing a ruthenium film

A method for forming an amorphous silicon thin film is disclosed. In some embodiments, a method includes loading a substrate into a reaction chamber; and conducting a plurality of deposition cycles on the substrate. Each of at least two of the cycles includes: supplying a silicon precursor to the reaction chamber during a first time period; applying radio frequency power to the reaction chamber at least partly during the first time period; stopping supplying of the silicon precursor and applying of the radio frequency power during a second time period between the first time period and an immediately subsequent deposition cycle; and supplying hydrogen plasma to the reaction chamber during a third time period between the second time period and the immediately subsequent deposition cycle. The method allows formation of an amorphous silicon film having an excellent step-coverage and a low roughness at a relatively low deposition temperature.

Methods of forming an amorphous silicon thin film

A cup holder includes: a support housing; an elevator housing, movable within the support housing; a cup bearing tray, movable within the elevator housing; and an elevator unit that moves the elevator housing and the cup bearing tray in opposite directions. The elevator unit includes: a main gear that is linked with the cup bearing tray and is pivotably installed on the support housing, a rack gear that is linked with the elevator housing, and a driven gear that is engaged between the main gear and the rack gear.

Sink type cup holder for motor vehicle

A plasma enhanced atomic layer deposition (PEALD) apparatus and a method of forming a conductive thin film using the same are disclosed. According to the present invention of a PEALD apparatus and a method, a process gas inlet tube and a process gas outlet tube are installed symmetrically and concentrically with respect to a substrate, thereby allowing the process gas to flow uniformly, evenly and smoothly over the substrate, thereby forming a thin film uniformly over the substrate. A uniquely designed showerhead assembly provides not only reduces the volume of the reactor space, but also allows the process gases to flow uniformly, evenly and smoothly throughout the reation space area and reduces the volume of the reaction space, and the smaller volume makes it easier and fast to change the process gases for sequential and repeated process operation.

Plasma enhanced atomic layer deposition (PEALD) equipment and method of forming a conducting thin film using the same thereof

A method of forming copper conductors for interconnecting active and passive elements as well as signal and power lines for circuits and devices on silicon wafers is disclosed. The method disclosed herein involves with using catalysts in conjunction with a chemical vapor deposition(CVD) process with typically using copper as a source material for forming interconnecting conductors. Interconnecting method for filling trenches, via holes, contacts, large trenches and holes for power devices and lines as well as for forming large passive elements is also disclosed. Disclosed herein are also a method of filling narrow and deep trenches and small in diameter and deep holes, and a method of forming very thin film on the flat top surface so that an etchback process, such as wet or dry etchback as well as plasma etchback processes, can be used for removing a thin film in preparation for subsequent processing steps, thereby rather expensive chemical mechanical polishing(CMP) process need not be used.

Growing community of inventors

Seoul, South Korea

Hyung Sang Park