Samsung Display Co., Ltd.

Samsung Displayco., Ltd.

Hyung Rae Cha

Dong Uk Kim

Dae Hyun Kim

Hyun Min Cho

Jung Hong Min

Seung A Lee

Jong Hyuk Kang

Hyun Deok Im

Se Young Kim

Young Chul Sim

Dong Kyun Seo

Sung Ae Jang

Ji Hyun Ham

Keun Kyu Song

Dong Eon Lee

Seung Geun Lee

Byung Ju Lee

So Young Lee

Jin Wan Kim

Chul Jong Yoo

A light emitting element includes a first semiconductor layer; an active layer on a surface of the first semiconductor layer; a second semiconductor layer on the active layer; an insulating film to enclose an outer periphery of each of the first semiconductor layer, the active layer, and the second semiconductor layer; and an electrode layer on the second semiconductor layer. The first semiconductor layer includes a first area that is covered by the insulating film, and a second area that is not covered by the insulating film. A perimeter of the outer periphery of the first semiconductor layer in the first area and a perimeter of the outer periphery of the first semiconductor layer in the second area are different from each other.

Light-emitting diode, and display device including light-emitting diode

A light-emitting element includes a core comprising a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an emissive layer disposed between the first semiconductor layer and the second semiconductor layer, an interlayer dielectric film surrounding a side surface of the core, a first element insulating film surrounding an outer surface of the interlayer dielectric film, and a second element insulating film surrounding an outer surface of the first element insulating film. The interlayer dielectric film includes an oxide insulating material having a dielectric constant of about 10 or more, and the interlayer dielectric film has a thickness of less than or equal to about 5 nm.

Light-emitting element and display device including the same

A light emitting element may include an emission stacked pattern including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer that are stacked in a longitudinal direction of the emission stacked pattern. The active layer may include a first surface that is in contact with the first conductive semiconductor layer in the longitudinal direction of the emission stacked pattern, and a second surface that is opposite the first surface and is in contact with the second conductive semiconductor layer. The first conductive semiconductor layer may include at least one n-type semiconductor layer, and the second conductive semiconductor layer may include at least one p-type semiconductor layer. Further, the first surface of the active layer may be located at a point corresponding to −20% to +20% of half of a total length of the emission stacked pattern in the longitudinal direction of the emission stacked pattern.

Light-emitting element and display device including same

Provided are a light emitting device, a method for manufacturing same, and a display device including the light emitting device. The method for manufacturing the light emitting device comprises the steps of: preparing a lower substrate including a substrate and a buffer semiconductor layer formed on the substrate, forming an element rod by forming a separating layer disposed on the lower substrate, forming a first conductivity type semiconductor layer, an active material layer, and a second conductivity type semiconductor layer on the separating layer, and etching the first conductivity type semiconductor layer, the active material layer, the second conductivity type semiconductor layer, and the separating layer in a direction perpendicular to the lower substrate, forming a first insulating layer surrounding an outer circumferential surface of the element rod, forming a second insulating layer surrounding an outer circumferential surface of the first insulating layer and separating the element rod from the lower substrate to form a light emitting element.

Manufacturing method for forming an inorganic light emitting element having a low surface roughness

A light-emitting element and a display device including the same are provided. The light-emitting element comprising: a light-emitting element core including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer, a nitride insulating film surrounding a side face of the light-emitting element core, a first element insulating film surrounding an outer side face of the nitride insulating film, and a second element insulating film surrounding an outer side face of the first element insulating film, wherein a thickness of the nitride insulating film is smaller than each of a thickness of the first element insulating film and a thickness of the second element insulating film.

A light emitting element having a shape extending in a direction includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and second semiconductor layers, a first electrode layer on a second surface opposite to a first surface of the first semiconductor layer facing the active layer, a second electrode layer on a second surface opposite to a first surface of the second semiconductor layer facing the active layer, and an insulating film surrounding a side surface of the active layer, a side surface of the first electrode layer, and a side surface of the second electrode layer, wherein a first area including the insulating film adjacent to a side surface of the active layer has a thickness larger than a thickness of a second area including the insulating film adjacent to a side surface of the first electrode layer.

Light emitting element, manufacturing method thereof, and display device comprising the light emitting element

A light emitting element may include: a light emitting element core including a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first semiconductor layer and the second semiconductor layer; and a single crystal insulating layer around a side surface of the light emitting element core.

Light emitting element having a single crystal insulating layer on a side surface of the light emitting element and display device including the same

A light-emitting element includes a first end portion and a second end portion disposed in a length direction of the light-emitting element, a first electrode corresponding to the first end portion, a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a second electrode on the second semiconductor layer and corresponding to the second end portion. The second electrode includes a first layer on the first semiconductor layer, and a second layer on the first layer. The first semiconductor layer includes a p-type semiconductor layer doped with a p-type dopant. The second semiconductor layer includes an n-type semiconductor layer doped with an n-type dopant. The first electrode is in ohmic contact with the first semiconductor layer. The second electrode is in ohmic contact with the second semiconductor layer.

Light-emitting element, method of manufacturing light-emitting element, and display device including light-emitting element

A light emitting diode includes a first end and a second end facing each other, a current blocking layer, a first semiconductor layer, an active layer, a second semiconductor layer, and an insulating film surrounding outer circumferential surfaces of the first semiconductor layer, the active layer, and the second semiconductor layer and exposing at least a portion of the current blocking layer and at least a portion of the first semiconductor layer at the second end. The current blocking layer, the first semiconductor layer, the active layer, and the second semiconductor layer are sequentially disposed in a direction from the second end to the first end.

Light emitting diode and display device including the same

A light emitting element includes a semiconductor core having at least a partial region extending in a direction and including a first end, a second end, and a main body part between the first end and the second end; a first electrode layer surrounding the second end of the semiconductor core; a second electrode layer surrounding at least the first end of the semiconductor core and spaced apart from the first electrode layer; and an insulating layer surrounding the semiconductor core, the first electrode layer and the second electrode layer. The second end of the semiconductor core has a diameter smaller than a diameter of the main body part.

Light emitting element, manufacturing method therefor, and display device

A method of manufacturing a light-emitting element comprises providing a semiconductor structure on a substrate, the semiconductor structure emitting light having different wavelength bands from each other, measuring the light having the different wavelength bands from each other and defining wavelength regions, forming nanopatterns spaced apart from each other on the semiconductor structure, the nanopatterns having different diameters from each other, and etching the semiconductor structure to form element rods.

Method for manufacturing light emitting elements and display device including light emitting elements

A light emitting element includes a first semiconductor layer including a first type of semiconductor, the first semiconductor layer including a 1-1-th semiconductor layer and a 1-2-th semiconductor layer, which are arranged in a length direction of the light emitting element; a second semiconductor layer including a second type of semiconductor different from the first type; an active layer disposed between the 1-2-th semiconductor layer and the second semiconductor layer; and an intermediate layer disposed between the 1-1-th semiconductor layer and the 1-2-th semiconductor layer and having a porous structure.

Light emitting element, method of manufacturing the same, and display device including the same

Provided are a light-emitting element, a manufacturing method thereof, and a display device comprising the light-emitting element. The method for manufacturing the light-emitting element comprises the steps of: preparing a lower substrate including a substrate and a buffer material layer formed on the substrate, forming a separating layer disposed on the lower substrate and including at least one graphene layer, forming an element deposition structure by depositing a first conductivity type semiconductor layer, an active material layer, and a second conductivity type semiconductor layer on the separating layer, forming an element rod by etching the element deposition structure and the separating layer in a vertical direction; and separating the element rod from the lower substrate to form a light emitting element.

Light emitting element, manufacturing method thereof, and display device including the light emitting element

Provided is a method of manufacturing a light-emitting element, the method including positioning a substrate, forming a first separation layer, which includes a first sacrificial layer, an etching control layer on the first sacrificial layer, and a second sacrificial layer on the etching control layer, on the substrate, forming at least one first light-emitting element on the first separation layer, and separating the first light-emitting element from the substrate.

Growing community of inventors

Seoul, South Korea

Hyung Rae Cha