Samsung Electronics Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Samsung Led Co., Ltd.

Hyung Ky Back

Yong Chun Kim

Jae Hoon Lee

Moon Heon Kong

Dong Woo Kim

Hyun Kyung Kim

Sun Woon Kim

Jae Ho Han

Ho Young Song

Jeong Woo Park

Dong Yu Kim

A vertical group III-nitride light emitting device and a manufacturing method thereof are provided. The light emitting device comprises: a conductive substrate; a p-type clad layer stacked on the conductive substrate; an active layer stacked on the p-type clad layer; an n-doped AlGaInN layer stacked on the active layer; an undoped GaN layer stacked on the n-doped layer; and an n-electrode formed on the undoped GaN layer. The undoped GaN layer has a rough pattern formed on a top surface thereof.

Vertical group III-nitride light emitting device and method for manufacturing the same

There are provided a semiconductor light emitting device that can be manufactured by a simple process and has excellent light extraction efficiency and a method of manufacturing a semiconductor light emitting device that has high reproducibility and high throughput. A semiconductor light emitting device having a substrate and a lamination in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are sequentially laminated onto the substrate according to an aspect of the invention includes a silica particle layer; and an uneven part formed at a lower part of the silica particle layer.

Semiconductor light emitting device and method of manufacturing the same

There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.

Semiconductor light emitting device having patterned substrate and manufacturing method of the same

Semiconductor light emitting device having patterned substrate

The invention provides a vertical group III-nitride light emitting device improved in external extraction efficiency and a method for manufacturing the same. The method includes forming an undoped GaN layer and an insulating layer on a basic substrate. Then, the insulating layer is selectively etched to form an insulating pattern, and an n-doped AlGaInN layer, an active layer and a p-doped AlGaInN layer are sequentially formed on the insulating pattern. A conductive substrate is formed on the p-doped AlGaInN layer. The basic substrate, the undoped gaN layer and the insulating pattern are removed, and an n-electrode is formed on a part of the exposed surface of the n-doped AlGaInN layer.

Method for manufacturing vertical group III-nitride light emitting device

Disclosed herein is a flip-chip type nitride semiconductor light emitting diode. The light emitting diode comprises an n-type nitride semiconductor layer formed on a transparent substrate and having a substantially rectangular upper surface, an n-side electrode which comprises at least one bonding pad adjacent to at least one corner of the upper surface of the n-type nitride semiconductor layer, extended electrodes formed in a band from the bonding pad along four sides of the upper surface of the n-type nitride semiconductor layer and one or more fingers extended in a diagonal direction of the upper surface from the bonding pad and/or the extended electrodes, an active layer and a p-type nitride semiconductor layer sequentially stacked on a region of the n-type nitride semiconductor layer where the n-side electrode is not formed, and a highly reflective ohmic contact layer formed on the p-type nitride semiconductor layer.

Flip-chip type nitride semiconductor light emitting diode

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Kyungki-do, South Korea

Hyung Ky Back