Samsung Electro-mechanics Co., Ltd.

Samsung Electronics Co., Ltd.

Samsung Led Co., Ltd.

Hyung-kun Kim

Yu-Sik Kim

Hyun-Soo Kim

Cheol-soo Sone

Jeong-wook Lee

Kyoung-kook Kim

Kwang-ki Choi

Tae-hoon Jang

Yu-sik Kim

Kyoung-ho Ha

Seoung-jae Im

Su-hee Chae

Jae-hee Cho

Han-youl Ryu

Xiaoqing Zeng

Geun-woo Ko

Si-han Kim

Yong-Min Kwon

Dong-kuk Lee

Jae-wook Jeong

A light-emitting diode (LED) package includes a light-emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; an isolating insulation layer; a first connection electrode portion and a second connection electrode portion electrically connected to the first conductive-type semiconductor layer and the second conductive-type semiconductor layer, respectively; a first electrode pad and a second electrode pad electrically connected to the first connection electrode portion and the second connection electrode portion, respectively; a first molding resin layer provided between the first electrode pad and the second electrode pad; a first pillar electrode and a second pillar electrode electrically connected to the first electrode pad and the second electrode pad, respectively; and a second molding resin layer provided on the first molding resin layer, the first electrode pad, and the second electrode pad, and between the first pillar electrode and the second pillar electrode.

Light-emitting diode (LED) package

A light-emitting device package uses a metal layer as a reflective region and includes a light-emitting device chip and an electrode pad that are disposed on an insulating layer. In addition, the electrode pad and an electrode pattern of a printed circuit board are connected to each other by an electrode pattern formed of conductive ink. A method of manufacturing a light-emitting device package includes forming an insulating layer on a metal layer, and bonding a light-emitting device chip and an electrode pad on the insulating layer. The electrode pad and a printed circuit board are connected to each other by conductive ink.

Light-emitting device package and method of manufacturing the same

Provided are a light-emitting device package and a method of manufacturing the same. The light-emitting device package may include a plurality of light-emitting chips on one substrate (board). The plurality of light-emitting chips may produce colors around a target color. The target color may be produced by combinations of the colors of light emitted from the plurality of light-emitting chips. The colors around the target color may have the same hue as the target color and have color temperatures different from that of the target color. The plurality of light-emitting chips may have color temperatures within about &#xb1;250K of that of the target color.

A backlight unit for a liquid crystal display (LCD) using a light emitting diode (LED) is provided. The backlight unit includes a blue light source, a red light source, and a green light source. The green light source includes an ultraviolet (UV) LED and a green phosphor excited by light emitted from the UV LED.

Backlight unit for LCD using LED

A light emitting device package is provided. The light emitting device package includes: a light emitting device; and first and second electrodes disposed a predetermined distance from each other and respectively adhered to the light emitting device so as to be electrically connected to the light emitting device, the first and second electrodes applying a current or voltage to the light emitting device and emitting heat generated by the light emitting device.

Light emitting device package

A light emitting diode module having improved luminous efficiency is provided. The light emitting diode module includes: a light emitting chip; a phosphor layer formed of phosphor materials emitting light having a wavelength longer than the light emitted from the light emitting chip using light emitted from the light emitting chip as an excitation source; and a reflection plate that is disposed between the light emitting chip and the phosphor layer and that reflects the light emitted by the phosphor layer.

Light emitting diode module

Example embodiments may include a light emitting device package. The light emitting device package may include a light emitting device, a package body-including a cavity having a bottom surface on which the light emitting device is mounted and a side surface for reflecting light emitted from the light emitting device, a first electrode protruding from the package body, and a second electrode coupled with the package body. The first and second electrodes may be designed to couple respectively with the second and first electrodes of another light emitting device package, thereby forming an array of light emitting device packages.

Light emitting package and light emitting package array formed by coupled electrodes

A light emitting device package is provided. The light emitting device package comprises a base substrate on which a wiring pattern is formed; a light emitting device mounted on the base substrate to emit light when supplied with driving power through the wiring pattern; a molded lens stably seated on the base substrate and having an inner space for sealing the light emitting device and reflective surfaces formed along outer sides facing the inner space to guide light from the light emitting device in an effective display direction; and a sealing resin between the inner space to bond the base substrate to the molded lens, whereby the packaging structure is simplified so that an assembly process and reliability testing are simplified, process losses due to defects are minimized, and the light extraction efficiency from the light emitting device and heat-dissipation performance are improved.

A long life light-emitting diode (LED) module is provided. The LED module includes: a light-emitting chip; a phosphor layer formed of phosphor materials that transform light emitted from the light-emitting chip into light having a longer wavelength than the light emitted from the light-emitting chip; a capping layer that is formed on the light-emitting chip and protects the light-emitting chip; and a heat spreading plate that is disposed between the capping layer and the phosphor layer that dissipates heat generated in the light-emitting chip and the phosphor layer.

Light emitting diode module with heat spreading plate between capping layer and phosphor layer

Example embodiments may include a light emitting device package. The light emitting device package may include a light emitting device, a package body including a cavity having a bottom surface on which the light emitting device is mounted and a side surface for reflecting light emitted from the light emitting device, a first electrode protruding from the package body, and a second electrode coupled with the package body. The first and second electrodes may be designed to couple respectively with the second and first electrodes of another light emitting device package, thereby forming an array of light emitting device packages.

Light emitting package and light emitting package array

Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate, forming a first trench dividing the emissive layer into light emitting device units in which the emissive layer remains on the lower part of the first trench to a desired, or alternatively, a predetermined thickness, forming a passivation layer on the emissive layer, forming a p-type electrode on the p-type semiconductor layer of the emissive layer, forming a metal supporting layer on the passivation layer and the p-type electrode, removing the substrate, removing a remaining portion of the emissive layer when the surface of the emissive layer is exposed by removing the substrate, forming a n-type electrode on the n-type semiconductor layer of the emissive layer, and cutting the metal supporting layer to divide the emissive layer into the light emitting device units.

Method of manufacturing vertical light emitting device

Provided is a semiconductor laser device, a semiconductor laser device package including the semiconductor laser device and methods of manufacturing the same. A semiconductor laser device may include a light emission structure including a first clad layer, an active layer and a second clad layer sequentially deposited on a substrate, a submount to which the light emission structure bonded, and a light shield plate in the submount, wherein the light shield plate blocks an end of the substrate on a light emission face of the light emission structure and blocks light leaked through the end of the substrate.

Semiconductor laser device including a light shield plate, semiconductor laser device package, and methods of manufacturing the same

Example embodiments may provide a submount in to which a multi-beam laser diode may be flip-chip bonded and a multi-beam laser diode module including the submount. The submount may include a first submount and a second submount. The first submount may include a first substrate, a plurality of first solder layers formed on the first substrate corresponding to electrodes of the multi-beam laser diode, and a plurality of via holes that may penetrate the first substrate and may be filled with conductive materials to electrically connect to the first solder layers. The electrodes may be bonded to the first solder layers. The second submount may include a second substrate under the first substrate and a plurality of bonding pads corresponding to the number of electrodes formed on the second substrate to electrically connect to the conductive materials filled in the via holes.

Growing community of inventors

Suwon-si, South Korea

Hyung-kun Kim