Skhynix Inc.

Hyung Keun Kim

Jun Ku Ahn

Sung Lae Cho

Jun Young Lim

A semiconductor device includes a stack structure including first electrodes and insulating layers alternately stacked on each other, a second electrode passing through the stack structure, and variable resistance patterns each interposed between the second electrode and a corresponding one of the first electrodes. Each of the first electrodes includes a first sidewall facing the second electrode, and each of the insulating layers includes a second sidewall facing the second electrode. At least a part of each of the variable resistance patterns protrudes farther towards the second electrode than the second sidewall.

Semiconductor device and manufacturing method of the semiconductor device

A method for fabricating a semiconductor apparatus includes providing a semiconductor substrate, stacking a conductive layer, a variable resistance layer, and a sacrificial layer on the semiconductor substrate, etching the conductive layer, the variable resistance layer, and the sacrificial layer to form a pillar structure including a lower electrode, a variable resistor device, and a sacrificial layer pattern, removing the sacrificial layer pattern, and forming an upper electrode over the variable resistor device in a hole which is formed by removing the sacrificial layer pattern.

Growing community of inventors

Icheon, South Korea

Hyung Keun Kim