Skhynix Inc.

Hyung June Yoon

Hoon Moo Choi

Jae Hyung Jang

Jae Won Lee

Jong Chae Kim

Dong Jin Lee

Jong Eun Kim

Nam Il Kim

Ho Young Kwak

An image sensing device is provided to include: a substrate having a first surface on which light is incident and a second surface facing the first surface; a plurality of detection structures, each comprising a control node configured to exhibit a conductivity type and generate a potential gradient in the substrate, and a detection node configured to capture photocharge which is generated in response to incident light and migrates in response to the potential gradient; and a first well area disposed to abut the control nodes of the plurality of detection structures and containing an impurity with a different conductivity type from the conductivity type of the control nodes.

Image sensing device

An image capturing apparatus may include a first time of flight (ToF) sensor configured to calculate a distance to a target object using the time difference between a reference pulse time at which a modulated light signal is irradiated and a pulse sensing time at which a reflected modulated light signal, reflected from the target object and incident thereon, is sensed, a second ToF sensor configured to calculate the distance to the target object using a phase difference between the modulated light signal and the reflected modulated light signal, and a controller configured to enable any one of the first and second ToF sensors, based on first pixel data which the first ToF sensor generates to sense the reflected modulated light signal.

Image capturing apparatus

An image sensing device is provided to include a pixel array having a plurality of pixels arranged in a matrix shape. Each of the pixels includes: a control node configured to generate a hole current in a substrate; a detection node configured to capture photocharge migrated by the hole current, formed in a shape whose at least part is partially open, and disposed to surround the control node, and a low resistance region including a dielectric layer formed in the substrate, and disposed in the opening on of the detection node. The low resistance region includes an inner low resistance region disposed between the control node and the center of the pixel.

An image sensing device and a photographing device including the same are disclosed. The image sensing device includes a pixel array configured to have a first pixel and a second pixel that are different from each other in terms of at least one of an effective measurement distance, temporal resolution, spatial resolution, and unit power consumption, and a timing controller configured to determine whether a distance to a target object is equal to or less than a predetermined threshold distance, and selectively activate any one of the first pixel and the second pixel according to the result of determination.

Image sensing device and photographing device including the same

An image sensing device is provided to include a pixel array of unit pixels, each pixel structured to respond to incident light to produce photocharges and including different photosensing sub-pixels at different locations within the unit pixel to detect incident light, different detection structures formed at peripheral locations of the different photosensing sub-pixels of the unit pixel, respectively, and configured to receive the photocharges that are generated by the different photosensing sub-pixels of and are carried by a current in the unit pixel, a unit pixel voltage node located at a center portion of the unit pixel and electrically coupled to electrically bias an electrical potential of the different photosensing sub-pixels, and a control circuit coupled to the different detection structures of the unit pixel to supply sub-pixel detection control signals to the different detection structures of the unit pixel, respectively.

An image sensing device is disclosed. The image sensing device includes a semiconductor substrate, a plurality of signal detectors, an insulation layer, and at least one gate. The semiconductor substrate includes a first surface and a second surface opposite to the first surface, and generates signal carriers in response to light incident upon the first surface. The signal detectors are formed on the semiconductor substrate and located closer to the second surface than the first surface of the semiconductor substrate, and detect the signal carriers using a difference in electric potential. The insulation layer is disposed at the second surface of the semiconductor substrate, and isolates the signal detectors from each other. The at least one gate is disposed at the insulation layer interposed between the signal detectors, and reflects light arriving at the second surface of the semiconductor substrate back to the semiconductor substrate.

An image sensing device may include a first tap and a second tap configured to generate a hole current in a substrate, and capture photocharge which is generated by incident light and migrated by the hole current. The first and second taps may be disposed in vertex regions facing each other in a diagonal direction in one pixel, respectively.

The image sensing device includes a pixel array including a plurality of unit pixels is arranged in rows and columns. Each of the plurality of unit pixels includes a photoelectric conversion element to generate charge carriers by converting light incident upon the photoelectric conversion element, a plurality of floating diffusion regions spaced apart from the photoelectric conversion element to hold the charge carriers, a plurality of circulation gates located at sides of the photoelectric conversion element in each of a first direction and a second direction perpendicular to the first direction, configured to create an electric field in different regions of the photoelectric conversion element based on circulation control signals, and configured to induce movement of the charge carriers, and a plurality of transfer gates located between the circulation gates, and configured to transfer the charge carriers generated by the photoelectric conversion element to a corresponding floating diffusion region.

The image sensing device includes a pixel array including a plurality of unit pixels arranged in columns and rows. Each unit pixel includes a photoelectric conversion element, circulation gates, transfer gates, and drain nodes. The photoelectric conversion element generates photocharges by performing photoelectric conversion of incident light. The circulation gates are located at sides of the photoelectric conversion element, receive circulation control signals and move the photocharges within the photoelectric conversion element in a predetermined direction based on the circulation control signals. The transfer gates are respectively located between two adjacent circulation gates, receive a transfer control signal and transmit the photocharges to a floating diffusion region based on the transfer control signal. The drain nodes are located at sides of the circulation gates that are opposite to the photoelectric conversion element, and receive a drain voltage. The drain nodes include a first drain node that is shared by two adjacent unit pixels arranged in the first direction and a second drain node that is shared by the two adjacent unit pixels arranged in the second direction.

Growing community of inventors

Icheon-si, South Korea

Hyung June Yoon