Skhynix Inc.

Hyung Jun Yang

Sun Mi Park

Eun Mee Kwon

There are provided a semiconductor device and a manufacturing method of a semiconductor device. The semiconductor device includes: a gate structure including conductive layers and insulating layers, which are alternately stacked; channel structures penetrating the gate structure, the channel structures being arranged in a first direction; and a cutting structure extending in the first direction, the cutting structure consecutively penetrating the channel structures. Each of the channel structures includes a first channel structure and a second channel structure, which are isolated from each other by the cutting structure.

Growing community of inventors

Icheon-si, South Korea

Hyung Jun Yang