Samsung Display Co., Ltd.

Samsung Mobile Display Co., Ltd.

Pohang Iron & Steel Co. Ltd.

Hyung-Jun Kim

Chang-Oh Jeong

Jae-Hong Kim

Jae-Kyeong Jeong

Yeon-gon Mo

Hyun-Soo Shin

Yong-Mo Choi

Sung-Haeng Cho

Il-Yong Yoon

Seok-Hwan Bang

Ji-Man Lim

Seong-Joon Lim

Shi-Yeob Lee

A thin film transistor substrate includes a gate electrode disposed on a base substrate, an active pattern overlapping the gate electrode, a source metal pattern including both a source electrode disposed on the active pattern and a drain electrode spaced apart from the source electrode, a buffer layer disposed on the source metal pattern and contacting the active pattern, a first passivation layer disposed on the buffer layer and a second passivation layer disposed on the first passivation layer. The density of hydrogen in the buffer layer is greater than the density of hydrogen in the first passivation layer and less than the density of hydrogen in the second passivation layer.

Thin film transistor substrate and method of manufacturing the same

A display substrate includes a base substrate, a first insulating layer formed on a base substrate, a pixel including a pixel electrode having the first insulating layer, and a circuit including a circuit transistor disposed on a peripheral area to drive the pixel. The pixel includes a first channel formed on the base substrate having the first insulating layer formed thereon. The first channel includes a poly-silicon layer, a first source electrode and a first drain electrode formed on the first channel that are spaced apart from each other, and a first gate electrode formed on the first source electrode and the first drain electrode corresponding to the first channel which is formed of the transparent conductive material. The poly-silicon layer is formed at a front channel portion of the first channel proximal to the first gate electrode through the first gate electrode.

Display substrate and method of manufacturing the same

A thin film transistor display panel includes a substrate, a gate wire on the substrate and including a gate line and a gate electrode; a gate insulating layer on the gate wire; a semiconductor layer on the gate insulating layer; a data wire including a source electrode on the semiconductor layer, a drain electrode opposing the source electrode with respect to the gate electrode, and a data line; a passivation layer on the data wire having a contact hole exposing the drain electrode; and a pixel electrode on the passivation layer and connected to the drain electrode through the contact hole. The gate wire has a first region and second region where the gate line and the gate electrode are positioned, respectively. The thickness of the gate wire in the first region is greater than the thickness of the gate wire in the second region.

Thin film transistor display panel and manufacturing method thereof

Thin film transistor display panel having a gate wire with different thicknesses and manufacturing method thereof

A method of fabricating a thin-film transistor (TFT) substrate includes forming a gate electrode on a substrate; forming an insulating film on the gate electrode; forming an amorphous semiconductor pattern on the insulating film; and forming a source electrode separated from a drain electrode on the amorphous semiconductor pattern; forming a light-concentrating layer, which includes a protrusion, on the amorphous semiconductor pattern, the source electrode, and the drain electrode; and crystallizing at least part of the amorphous semiconductor pattern by irradiating light to the protrusion of the light-concentrating layer.

Method of fabricating thin-film transistor substrate

A thin film transistor (TFT) includes a substrate, a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a charge concentration of about 1&#xd7;10atom/cmto about 1&#xd7;10atom/cm, a gate electrode on the substrate, a gate insulating layer between the gate electrode and the transparent semiconductor layer, the gate insulting layer insulating the gate electrode from the transparent semiconductor layer, and source and drain electrodes on the substrate, the source and drain electrodes being in contact with the transparent semiconductor layer.

Thin film transistor, method of fabricating a thin film transistor and flat panel display device having the same

The present invention relates to a method of reducing a band mark on an electroplating steel sheet, which can also reduce plating defects and damages to the materials caused by the differences in the physical characteristics of composition materials of a conductor roll used during electroplating Zn or Ni onto a steel sheet. In other words, the present invention comprises ceramic coating portions of circular bands, placed respectively in a thin strip at the both edge regions of the metal band position at the central portion of a conductor roll. In this manner, the present invention has the effects of reducing a band mark on a plating steel sheet, and also suppressing the generation of static electricity by eliminating the level difference between the conductive material (metal band portion) and the non-conductive material (rubber section). The present invention is also cabaple extending the life of a conductor roll by enhancing the wear and corrosion resistances thereof.

Growing community of inventors

Yongin-si, South Korea

Hyung-Jun Kim