Lg Chem, Ltd

Hyung Ju Ryu

Se Jin Ku

Mi Sook Lee

Sung Soo Yoon

Je Gwon Lee

No Jin Park

Eun Young Choi

Jung Keun Kim

Yoon Hyung Hur

Eung Chang Lee

Na Na Kang

Jeong Kyu Lee

A method for producing a polymer containing metal atoms or halogen atoms at the terminals thereof with excellent efficiency while minimizing or eliminating side reactions or the like is provided. The method can also freely control molecular weight characteristics of the polymer.

Method for producing polymer

The present application relates to a pinning composition, a laminate comprising the same, and a method for producing the same. The pinning composition of the present application can impart directionality and location selection properties to a polymer membrane comprising a self-assembly structure of a block copolymer. The pinning composition of the present application exhibits excellent reaction selectivity, whereby it can form a vertical lamella structure with a high degree of alignment. In addition, the pinning composition of the present application may be suitable for application to low temperature processes.

Random copolymer and pinning composition comprising the same

The present application relates to a block copolymer and a use thereof. The present application can provide a laminate which is capable of forming a highly aligned block copolymer on a substrate and thus can be effectively applied to production of various patterned substrates, and a method for producing a patterned substrate using the same.

Laminate for patterned substrates

A neutral layer composition and a neutral layer formed from the same are disclosed herein. In some embodiments, a neutral layer composition includes a random copolymer having a unit represented by Formula 1, and a unit containing an aromatic structure having one or more halogen atoms, wherein the molar amount of the unit represented by Formula 1 is present in a range of 9 mol % to 32 mol %, based on the total molar amount of the copolymer. The neutral layer can effectively control orientation characteristics of various block copolymers deposited thereon.

Neutral layer composition

Methods for forming a laminate are provided. The method provides a highly aligned block copolymer without orientation defects, coordination number defects distance defects and the like on a substrate, thereby providing a laminate which can be effectively applied to the production of various patterned substrates, and a method for producing a patterned substrate using the same.

Polymer composition

A method for preparing a patterned substrate includes selectively etching any one segment block of a self-assembled block copolymer from a laminate having a substrate; wherein a block copolymer membrane is formed on the substrate and the substrate contains the self-assembled block copolymer. According to the method, the self-assembled pattern of the block copolymer can be efficiently and accurately transferred on the substrate to prepare a patterened substate.

Preparation method of patterned substrate

A laminate and a method for producing a patterned substrate using the same are disclosed herein. In some embodiments, a laminate includes a substrate, and a stripe pattern having first and second polymer lines alternately and repeatedly disposed on the substrate, wherein the first polymer line comprises a first polymer having a first polymerized unit having a ring structure connected to a main chain and a second polymerized unit represented by Formula 1. The method may be applied to manufacture of devices, such as electronic devices, or of applications, such as integrated optical systems, guidance and detection patterns of magnetic domain memories, flat panel displays, liquid crystal displays (LCDs), thin film magnetic heads or organic light emitting diodes, and may be used to build a pattern on a surface used in manufacture of discrete track media, such as integrated circuits, bit-patterned media and/or magnetic storage devices such as hard drives.

Laminate

The present application relates to a method for preparing a patterned substrate. The method may be applied to a process of manufacturing devices such as, for example, electronic devices and integrated circuits, or other applications, such as manufacture of integrated optical systems, guidance and detection patterns of magnetic domain memories, flat panel displays, liquid crystal displays (LCDs), thin film magnetic heads or organic light emitting diodes, and the like, and may also be used to build a pattern on a surface used in manufacture of discrete track media, such as integrated circuits, bit-patterned media and/or magnetic storage devices such as hard drives.

The present application can provide a block copolymer and a use thereof. The block copolymer of the present application can have excellent self-assembly properties or phase separation characteristics and excellent etching selectivity, and various other functions as required can be freely imparted thereto.

Block copolymer

The present application may provide a block copolymer and a use thereof. The block copolymer of the present application has excellent self-assembly properties or phase separation characteristics, to which various functions to be required can also be freely imparted.

A method for analyzing a polymer membrane, which can improve accuracy of structural analysis of the polymer membrane and shorten the analysis time by effectively removing noise is provided.

Method for analyzing polymer membrane

A method for producing a polymer film is disclosed herein. The method is capable of effectively forming a polymer film on a substrate, where the polymer film comprises highly aligned block copolymers without orientation defects, coordination number defects, distance defects, and the like. The method can be applied to production of various patterned substrates.

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Daejeon, South Korea

Hyung Ju Ryu