Sk Enpulse Co., Ltd.

Hyung-joo Lee

Jiyeon Ryu

Kyuhun Kim

A blank mask including a transparent substrate, a phase shift film disposed on the transparent substrate, and a light shielding film disposed on the phase shift film. The phase shift film has XRD maximum peak at 2θ of 15° to 30° when normal mode XRD analysis is performed on an upper surface of the phase shift film. The transparent substrate has XRD maximum peak at 2θ of 15° to 30° when performing normal mode XRD analysis on a lower surface of the transparent substrate. AI1 value of the blank mask expressed by below Equation is 0.9 to 1.1. XM1 is the maximum value of the measured X-ray intensity when the normal mode XRD analysis is performed on upper surface of the phase shift film. XQ1 is the maximum value of the measured X-ray intensity when the normal mode XRD analysis is performed on the lower surface of the transparent substrate.

Blank mask and photomask using the same

The present disclosure relates to a blank mask and the like, and comprises a transparent substrate, a phase shift film disposed on the transparent substrate, and a light shielding film disposed on the phase shift film. The blank mask has a TFT1 value of 0.25 μm/100° C. or less expressed by Equation 1 below:

Growing community of inventors

Suwon-si, South Korea

Hyung-joo Lee