Lg Innotek Co., Ltd.

Lg Display Co., Ltd.

Suzhou Lekin Semiconductor Co., Ltd.

Korea Photonics Technology Institute

Lg Innotex Co., Ltd.

Hyung Jo Park

Hwan Mook Kim

Jeong-Ho Lee

Sun Kyung Kim

Hyun Kyong Cho

Hyo Kun Son

Jae Kyun Lee

Hae Joon Son

Jung Il Lee

Dae Sung Kang

Hyun Ju Kim

Bum Soo Kim

Tae Man Kim

Jung Hun Oh

Woon Kyung Choi

Chong Chan Eun

Hyun-Ho Song

Jun Beom Cho

Byoung Chul Choi

Seung-Bum Lee

Myoung Su Yang

Jae Ho Shin

Se Joon Baek

Jeong-Joon Lee

Gu-Yun Bok

Young Phil Bang

Seung-Won Moon

Cheol Joo Moon

Je Hyun Kim

In Kyu Lee

Jung-Deog Yoo

Byoung-Mok Ha

Chang Bo Shim

Jong Won Kim

Hong Seok Lee

Jun Young Yu

Sung-Mo Koo

Jung Seung Kim

Chang-Soo Na

Heung-Sun Kim

Jae Min Jong

Jung-Sik Kim

Tae Hoon Chung

Jong Hyeob Baek

Hyun-Seok Jang

Jin Woo Ju

Tak Jung

Ja Yeon Kim

Sang Hern Lee

Hwa Seop Oh

Yoon Seok Kim

Jae Chuon Ryu

Dae Woo Jeon

Exemplary embodiments provide a semiconductor device including: a semiconductor structure which includes a first-conductive-type semiconductor layer, a second-conductive-type semiconductor layer, and an active layer disposed between the first-conductive-type semiconductor layer and the second-conductive-type semiconductor layer, wherein the semiconductor structure has a first recess passing through the second-conductive-type semiconductor layer, the active layer and a first portion of the first-conductive-type semiconductor layer; and a plurality of second recesses passing through the second-conductive-type semiconductor layer, the active layer and a second portion of the first-conductive-type semiconductor layer, wherein the first recess is disposed along an outer surface of the semiconductor structure, wherein the plurality of second recesses are surrounded by the first recess.

Semiconductor device

One embodiment provides a semiconductor device comprising: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the first semiconductor layer; a third semiconductor layer disposed on the second semiconductor layer; and a reflective layer disposed on the third semiconductor layer, wherein the part between the first and second semiconductor layers, the part between the third and second semiconductor layers, and the second semiconductor layer comprise a depletion region, and the conductivity of the first semiconductor layer and the conductivity of the third semiconductor layer are different from each other, and the second semiconductor layer comprises an intrinsic semiconductor layer.

A semiconductor device of an embodiment includes first and second semiconductor layers having different conductivity types; a third semiconductor layer interposed between the first and second semiconductor layers; and a fourth semiconductor layer interposed between the second and third semiconductor layers, having a lower doping concentration than that of the first semiconductor layer and the same conductivity type as the first semiconductor layer, wherein the difference in doping concentration between the first semiconductor layer and the fourth semiconductor layer may be greater than 4&#xd7;E18 atoms/cm.

Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a reflective layer under the light emitting structure; a first electrode layer on the first conductive semiconductor layer; a metal layer under the reflective layer; and a conductive support member under the metal layer. The reflective layer has a thickness of 650 nm to 1550 nm. A top surface of the first conductive semiconductor layer includes a flat first region adjacent to an edge and a rough second region adjacent to the first region. An edge region of a top portion of the conductive support member has a protrusion, and the edge region of the top portion of the conductive support member is not overlapped with the light emitting structure in a vertical direction.

Semiconductor light emitting device

Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure, a buffer layer on the light emitting structure, and a filter layer on the buffer layer.

Light emitting device, light emitting device package

The non-polar or semi-polar group III nitride layer disclosed in a specific example of the present invention can be used for substrates for various electronic devices, wherein problems of conventional polar group III nitride substrates are mitigated or solved by using the nitride substrate of the invention, and further the nitride substrate can be manufactured by a chemical lift-off process.

Method for manufacturing a group III nitride substrate using a chemical lift-off process

Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a III-V group compound semiconductor, a reflective layer comprising mediums, which are different from each other and alternately stacked under the light emitting structure, and a second electrode layer under the reflective layer.

Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer including a first carrier blocking layer of semiconductor material; an active layer below the first conductive semiconductor layer; and a second conductive semiconductor layer below the active layer.

Provided are a semiconductor light-emitting device and a light-emitting device package having the same. The semiconductor light-emitting device comprises a light-emitting structure, a first electrode unit, and a second electrode layer. The light-emitting structure comprises a plurality of compound semiconductor layers having a rounded side surface at an outer edge. The first electrode unit is disposed on the light-emitting structure. The second electrode layer is disposed under the light-emitting structure.

Semiconductor light-emitting device and light-emitting device package having the same

A light emitting device comprises a second electrode layer; a second conductivity-type semiconductor layer on the second electrode layer; a current blocking layer comprising an oxide of the second conductivity-type semiconductor layer; an active layer on the second conductivity-type semiconductor layer; a first conductivity-type semiconductor layer on the active layer; and a first electrode layer on the first conductivity-type semiconductor layer.

Light emitting device with current blocking layer

Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active; an electrode on a first region of the first conductive semiconductor layer; a conductive support member under the light emitting structure; a metal layer between the light emitting structure and the conductive support member; and a reflective layer between the metal layer and the light emitting structure, wherein the metal layer is physically contacted with a lower surface of the reflective layer, wherein the reflective layer includes a first layer and a second layer, wherein the first layer has a different material from the second layer, wherein the metal layer has a protrusion, wherein the first conductive semiconductor layer includes a roughness.

Semiconductor light emitting device having a reflective layer

A light emitting device package is provided. The light emitting device package includes a substrate including a first cavity having a first depth and a lateral surface inclined with respect to a bottom surface and a second cavity having a second depth recessed from the bottom surface of the first cavity and a lateral surface perpendicular to the bottom surface of the first cavity, a first electrode layer and a second electrode layer on the substrate, and a light emitting diode within the second cavity, the light emitting diode being electrically connected to the first and second electrode layers.

Light emitting device package

Provided is a light emitting device. A light emitting device includes: a conductive support member; a light emitting structure for generating a light on the conductive support member, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer; an electrode on the light emitting structure; and an oxide layer between the electrode and the light emitting structure. The light emitting structure includes an oxygen-injected region where oxygen is injected on an upper portion of the light emitting structure.

Light emitting device and light emitting device package

Provided are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a first electrode on an region of top surface of a first conductive semiconductor layer; a second electrode layer under a second conductive semiconductor layer; and a conductive support member under the second electrode layer, wherein the second conductive semiconductor layer includes a plurality of recesses on a lower portion of the second conductive semiconductor layer, wherein the second electrode layer has an uneven structure corresponding to the plurality of recesses.

Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a second electrode layer, a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on the second electrode layer, a reflective member spaced apart from the light emitting semiconductor layer on the second electrode layer, and a first electrode layer on the first conductive semiconductor layer.

Light-emitting element

Growing community of inventors

Gwangju, South Korea

Hyung Jo Park