Samsung Electronics Co., Ltd.

Hyung-jin Bae

Jung-hyun Lee

Sang-Jun Choi

Chang-Soo Lee

Young-soo Park

Wenxu Xianyu

Young-Ju Kim

Bum-seok Seo

Provided is a data recording medium having improved data recording/storage characteristics and with an improved structure to have a higher data storage capacity, and a method of recording and/or easing data using the same. The data recording medium may include a Cu electrode layer on a substrate, and a data recording layer formed of a compound including a metal and at least one non-metal selected from the group consisting of S, Se, and Te, on the Cu electrode layer. Data is recordable to or erasable from the data recording layer by changing the resistance of the data recording layer by diffusing Cu ions from the Cu electrode layer to the data recording layer or by erasing Cu ions from the data recording layer by diffusing Cu ions from the data recording layer back to the Cu electrode layer, according to a voltage pulse applied to the data recording layer.

Data recording medium for data storage and method of recording or erasing data using the same

Provided are a resistive random access memory device and a method of manufacturing the same. The resistive random access memory device includes a switching device and a storage node connected to the switching device, and the storage node includes a first electrode and a second electrode and a resistance change layer formed of CuO between the first electrode and the second electrode.

Storage node of a resistive random access memory device with a resistance change layer and method of manufacturing the same

A multi-layer storage node, resistive random access memory device and methods of manufacturing the same are provided. The resistive random access memory device includes a switching structure and a storage node connected to the switching structure. The storage node includes a lower electrode, a first layer, a second layer, and an upper electrode that may be sequentially stacked. The first layer may be formed on the lower electrode and includes at least one of oxygen (O), sulfur (S), selenium (Se), tellurium (Te) and combinations thereof. The second layer may be formed on the first layer and includes at least one of copper (Cu), silver (Ag) and combinations thereof. The second layer may be formed of a material having an oxidizing power less than that of the first layer. The upper electrode may be formed on the second layer.

Multi-layer storage node, resistive random access memory device including a multi-layer storage node and methods of manufacturing the same

A semiconductor device including polysilicon (poly-Si) and method of manufacturing the same are provided. The semiconductor device includes a TaNmaterial layer and a poly-Si layer formed on the TaNmaterial layer. The semiconductor device including poly-Si may be manufactured by forming a TaNmaterial layer and forming a poly-Si layer by depositing silicon formed on the TaNmaterial layer and annealing silicon.

Semiconductor device including poly-Si and method of manufacturing the same

Provided are a wire structure and a semiconductor device having the wire structure. The wire structure includes a first wire that has a first region having a width of several to tens of nanometers and a second region having a width wider than that of the first region.

Wire structure and semiconductor device comprising the wire structure

Provided is a resistive random access memory (RRAM) device having a switching device and a storage node connected to the switching device, the storage node including a first electrode formed of a metal compound, the metal compound including metal with no more than a divalence and a metal compound having anions, a solid electrolyte layer formed on the first electrode, and a second electrode formed on the solid electrolyte layer.

Resistive random access memory device

A nonvolatile variable resistance memory device may include a lower electrode; a stacked structure including a first Cu compound layer disposed on the lower electrode, and a second Cu compound layer disposed on the first Cu compound layer; and an upper electrode disposed on the second Cu compound layer.

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Seoul, South Korea

Hyung-jin Bae