Samsung Electronics Co., Ltd.

Hyung-jik Kim

Byung-Hoon Jeong

Han-gu Sohn

A semiconductor memory device capable of performing a partial self refresh and semiconductor memory system including same is provided. The semiconductor memory device includes: a memory circuit including a memory array; a skip address storage unit storing an address of an excluded region not requiring refresh in the memory array as a skip address; a refresh address generator providing an address of a region of the memory array requiring refresh as a refresh address; and an address comparator receiving and comparing the skip address and refresh address, and providing a refresh control signal to the memory circuit based on the comparison.

Semiconductor memory device performing partial self refresh and memory system including same

A repair circuit and related method of repair are disclosed. In the repair circuit, row repair or column repair control units are selectively actuated to perform respective repair functions within a semiconductor memory device in relation to a commonly provided defective address. Both post-package defects and/or before package defects may be repaired in response to the defective address.

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Seongnam-si, South Korea

Hyung-jik Kim