Samsung Electronics Co., Ltd.

Hyung-Ho Ko

Sang-jun Choi

Chang-ki Hong

Im-Soo Park

Chang-Sup Mun

Doo-Won Kwon

Jeong-Nam Han

Woo-Gwan Shim

Dong-Gyun Han

Woo-gwan Shim

Yu-Kyung Kim

Sang-rok Hah

Hyo-San Lee

Kun-tack Lee

Young-Jun Kim

Young-min Kwon

Moon-hee Lee

Ki-Jong Park

Jong-ho Chung

This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.

Methods of fabricating a semiconductor device using a dilute aqueous solution of an ammonia and peroxide mixture

Disclosed are a cleaning solution for preventing damage of a silicon germanium layer when cleaning a semiconductor device including the silicon germanium layer and a cleaning method using the same. The cleaning solution of a silicon germanium layer includes from about 0.01 to about 2.5 percent by weight of a non-ionic surfactant with respect to 100 percent by weight of the cleaning solution, about 0.05 to about 5.0 percent by weight of an alkaline compound with respect to the cleaning solution and a remaining amount of pure water. The damage to an exposed silicon germanium layer can be prevented when cleaning a silicon substrate having a silicon germanium layer. Impurities present on the surface portion of the silicon germanium layer can be effectively removed.

Cleaning solution of silicon germanium layer and cleaning method using the same

A cleaning method for a semiconductor substrate including placing the semiconductor substrate into a cleaning chamber and injecting ozone gas (O) into the cleaning chamber. This process operates to cleanse the semiconductor substrate without corrosion or etching of the semiconductor substrate; even when the substrate has metal layer made of tungsten.

Method of cleaning semiconductor substrate

A method for cleaning a semiconductor substrate forming device isolation layers in a predetermined region of a semiconductor substrate to define active regions; etching predetermined areas of the active regions to form a recess channel region and such that sidewalls of the device isolation layers are exposed; and selectively etching a surface of the recess channel region using a predetermined cleaning solution to clean the semiconductor substrate where the recess channel region has been formed.

Methods for cleaning a semiconductor substrate having a recess channel region

A wet-etch composition may include: peracetic acid (PAA); and a fluorinated acid; a relative amount of the PAA in the composition being sufficient to ensure an etch rate of (P-doped-SiGe):(P-doped-Si) that is substantially the same as an etch rate of (N-doped-SiGe):(N-doped-Si). Such a wet-etch composition is hereafter referred to as a PAA-based etchant and can be used to make, e.g., a CMOS MBCFET, an electrode of a capacitor, etc.

PAA-based etchant, methods of using same, and resultant structures

A method of manufacturing a semiconductor device having a storage electrode of a capacitor is provided. The method includes the steps of: forming a contact hole perforating through an interlayer dielectric layer on a semiconductor substrate; forming a conductive plug to fill the contact hole and expose the surface of the interlayer dielectric layer; forming molds on the interlayer dielectric layer to expose the surface of the conductive plug; recessing the upper surface of the conductive plug to expose a portion of the sidewalls of the interlayer dielectric layer; forming an electrode layer to cover the recessed conductive plug, and the sidewalls of the interlayer dielectric layer and the molds; and removing upper surfaces of the electrode layer to make a storage electrode until molds are exposed. The method further includes the steps of: forming a conductive pad electrically connected to the semiconductor substrate and a lower insulating layer surrounding the conductive pad; and forming bit line stacks on the lower insulating layer, wherein the interlayer dielectric layer covers the bit line stacks, and the contact hole between the bit line stacks exposes the conductive pad.

Method of manufacturing semiconductor device having storage electrode of capacitor

A wet process performed in the manufacture of semiconductor devices with cathode water and anode water produced from electrolyte using a 3-cell electrolyzer having an intermediate cell for the electrolyte. The 3-cell electrolyzer includes an anode cell, a cathode cell, and an intermediate cell between the anode and cathode cells, which are partitioned by ion exchange membranes. Deionized water is supplied into the anode and cathode cells, and the intermediate cell is filled with an electrolytic aqueous solution to perform electrolysis. The anode water containing oxidative substances or the cathode water containing reductive substances, which are produced by the electrolysis process, are used in the wet process.

WET PROCESS FOR SEMICONDUCTOR DEVICE FABRICATION USING ANODE WATER CONTAINING OXIDATIVE SUBSTANCES AND CATHODE WATER CONTAINING REDUCTIVE SUBSTANCES, AND ANODE WATER AND CATHODE WATER USED IN THE WET PROCESS

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Seoul, South Korea

Hyung-Ho Ko