Samsung Electronics Co., Ltd.

Hyung-gyu Lee

Jin-kyu Kim

Kyoung-Il Bang

Jung-Hwan Kim

Young-woo Park

Chan-ho Park

Kyoung-Gu Woo

Seong-Jun Ahn

Hee-Gyu Jin

Young-bong Kim

Kyu-ho Park

Sine Kim

Young-il Seo

A non-volatile mass storage memory and an input/output processing method using the memory are provided. The memory device includes a storage unit including a non-volatile random access memory and a flash memory and a controller to control the storage to process an input/output request. Accordingly, system memories having different purposes and functionalities, such as a flash memory and a dynamic random access memory (DRAM), may be integrated with each other.

Complex memory device and I/O processing method using the same

A logging optimization technology using a non-volatile memory is provided. A log record has a first link connected based on a page unit and a second link connected based on a transaction unit. The log record is stored in a non-volatile memory buffer. The log record stored in the non-volatile memory buffer is deleted or moved to a disk, if necessary.

Apparatus and method for logging optimization using non-volatile memory

A solid state drive (SSD) including a storage that includes a plurality of flash memories configured to be independently drivable and a controller to receive an input/output (I/O) request from a host, to split the I/O request into a plurality of sub-requests each having a size configured to be capable of being processed independently by each flash memory, and to process the I/O request based on the sub-requests.

Method of handling I/O request and solid state drive using the same

An apparatus and method for storing data using a non-volatile buffer. A first data is stored in a first non-volatile buffer according to a first input/output request. The first data stored in the first non-volatile buffer is written into a memory cell while a second data is being stored in a second non-volatile buffer according to a second input/output request.

Apparatus and method for storing data using non-volatile buffer

A data management system includes a data processor configured to provide a file system module configured to store first data in a flash memory in block units and a filter layer module configured to receive second data from the file system module and to store the second data in a phase-change random access memory (PRAM) in sub-block units. The filter layer module may be configured to identify difference data in the second data received from the file system module by comparing the received second data and third data stored in the PRAM, and to write the identified difference data to the PRAM. The second data may include file metadata and the first data may include data other than file metadata. The sub-block units may be byte units.

Data management systems, methods and computer program products using a phase-change random access memory for selective data maintenance

A memory system includes a variable resistance memory configured to input and output data by a first unit and a translation layer for managing the degree of wear of the variable resistance memory by a second unit, different from the first unit.

Memory system and wear leveling method thereof

A method of prefetching data in a hard disk drive includes searching for a logic block address (LBA) of data requested by an external apparatus in a history of a non-volatile cache of the hard disk drive, and if the LBA of the data is stored in the history, storing data recorded in a LBA stored after the LBA of the data requested by the external apparatus from among LBAs stored in the history in a buffer of the hard disk drive.

Method of prefetching data in hard disk drive, recording medium including program to execute the method, and apparatus to perform the method

A method and apparatus for writing data to and reading data from a phase-change random access memory (PRAM) include encoding original data using a predetermined encoding function, selecting data, from among the original data and the encoded data, which require less power when being written to the PRAM, writing the selected data to the PRAM, generating marking information related to the selected data, and writing the marking information to the PRAM. Therefore, power consumption can be reduced when data are written to the PRAM.

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Seoul, South Korea

Hyung-gyu Lee