Samsung Electronics Co., Ltd.

Hyung-Gon Kim

Min-Su Kim

Ki-Hwan Choi

Yeong-taek Lee

Dae-seok Byeon

Kyung-Min Kim

Sung-Chul Park

Sung-Soo Lee

Bong-Kil Jung

Youn-yeol Lee

Seok-Cheon Kwon

Seung-Hyun Moon

Soo-Woong Lee

Hyuk-Jun Yoo

Ku-Young Choi

A Frequency Division Duplex (FDD) wireless communication apparatus is provided. The FDD wireless communication apparatus includes a first antenna configured to one of transmit and receive, a second antenna configured to receive, and a switch configured to selectively connect one of the first antenna and the second antenna to a receiver.

Frequency division duplex wireless communication apparatus and method

A method of operating a memory system including a non-volatile memory device and a memory controller controlling the non-volatile memory device, includes reading data from a memory cell array in a unit of a page which includes a plurality of sectors; performing error correction decoding on the read data in a unit of a sector of the page; selecting at least one target sector which includes at least one uncorrectable error and selecting at least one pass sector wherein all errors of the pass sector are correctable by the error correction decoding; inhibiting precharging of bit-lines connected to the at least one pass sector while precharging target bit lines connected to the at least one target sector; and performing a read retry operation for data in the at least one target sector.

Memory system and method of operation thereof

A portable terminal is formed with reinforced structures for withstanding external impacts. The portable terminal includes a front case and an input device arranged on the front case. A first rear cover coupled to a rear side of the front case is formed from a metallic material. A second rear cover coupled to the rear side of the front case and the first rear cover is formed from a synthetic resin. And a fastening device anchors the second rear cover to the rear side of the front case. The input device is positioned on an outer surface of the front case, and the fastening device is anchored to a rear side of the input device.

Portable terminal

A non-volatile memory device may include a memory cell array, a page buffer, a column decoder, a column selection circuit and a repair circuit. The memory cell array includes normal memory cells and redundancy memory cells. In one example, the page buffer may load normal data and redundancy data from the memory cell array. The column decoder may generate a normal column selection signal and a redundancy column selection signal in response to a column address. The column selection circuit may select the normal data and redundancy data in response to the normal column selection signal and redundancy column selection signal. The repair circuit may then output one of the normal data and redundancy data.

Non-volatile memory device and non-volatile memory system having the same

Disclosed is a program method of a non-volatile memory device. The program method includes performing a least significant bit (LSB) program operation, during which an LSB program number is stored, and performing a most significant bit (MSB) program operation in a threshold voltage state order determined according to the LSB program number.

Nonvolatile memory device and method of driving the same

Disclosed is an operating method of a flash memory device, which includes normal memory cells and dummy memory cells. The operating method includes programming the normal memory cells and programming the dummy memory cells. A dummy pass voltage used for programming the dummy memory cells is different from a normal pass voltage used for programming the normal memory cells.

Flash memory device and operating method of flash memory device

Multiple bits are programmed in a NAND flash memory device by programming a memory cell with an LSB; storing the LSB into a cache register from the memory cell; programming the memory cell with an MSB that is stored in a main register; storing a data bit into the main register from the memory cell during a first verifying operation; storing a data bit into the cache register from the memory cell during a second verifying operation; and transferring the data bit to the main register from the cache register.

NAND flash memory devices and methods of LSB/MSB programming the same

A flash memory device includes a word line decoder configured to receive a row address, and decode a selected word line and a neighboring non-selected word line corresponding to the row address during a read operation, and a word line driver configured to receive data identifying the selected word line and the neighboring non-selected word line from the word line decoder, and applying a read voltage to the selected word line, a first voltage to non-selected word lines other than the neighboring non-selected word line, and a second voltage to the neighboring non-selected word line.

Flash memory device and read method

A nonvolatile memory device includes an array of memory cells arranged in rows and columns, the array of memory cells having wordlines associated therewith. A wordline voltage controller determines the levels of wordline voltages to be supplied to the respective wordlines and a wordline voltage generator generates the wordline voltages at the determined levels. Related methods are also provided.

Nonvolatile memory devices and methods of controlling the wordline voltage of the same

A memory device includes a main memory cell array and a redundant memory cell array configured to store a first parity code for data stored in the main memory cell array. The device further includes a parity generator configured to generate a second parity code responsive to reading of the stored data from the main memory cell array, and a comparator configured to compare the first and second parity codes. In some embodiments, the parity generator configured to generate the second parity code during a copyback operation.

Memory devices with error detection using read/write comparisons

A NAND flash memory device performing an error detecting and data reloading operation during a copy back program operation is provided. The device includes a cell array having a plurality of planes and a parity cell array having a plurality of parity planes. Each of the parity planes stores a parity of each of the planes. Additionally, the device includes a parity generating and parity column selecting circuit generating a new parity about reloaded data from an outside during a copy back program operation, and storing the new parity on a parity plane corresponding to a plane on which the reloaded data is stored.

NAND flash memory device performing error detecting and data reloading operation during copy back program operation

A bit failure detection circuit supports reliability testing of a memory device by accumulating a sum of data errors in data read from the memory device. The detection circuit compares a plurality of bytes of data read from the memory device against a plurality of bytes of reference data supplied during a test operation. The detection circuit also generates a flag upon detection that the sum of data errors exceeds a threshold number of acceptable data errors.

Bit failure detection circuits for testing integrated circuit memories

A NAND flash memory device according to some embodiments includes a cell array, a page buffer configured to copyback read the data in the cell array, and an error detector for detecting errors that occur during the copyback reading and for generating a detection signal. Detecting errors is performed concurrently with a copyback program operation and completes before finishing a copyback program verify operation. The data stored in the page buffer may be copyback programmed when the detection signal is a pass signal. The copyback operation may end without executing the copyback program operation when the detection signal is a fail signal. Since the copyback program operation and the error detection operation are performed concurrently, the errors occurring during the copyback operation may be detected without additional time delay. Additionally, occurrence of two-bit error may be prevented because the copyback program is not executed when the fail signal is generated.

Growing community of inventors

Seoul, South Korea

Hyung-Gon Kim