Skhynix Inc.

Korea Railroad Research Institute

Samsung Display Co., Ltd.

Hyung-Chul Kim

Se-Aug Jang

Yun-Hyuck Ji

Seung-Mi Lee

Moon-Sig Joo

Hyung-Woo Lee

Chan Bae Park

Sam-Young Kwon

Yong-Hyeon Cho

Dong-Wook Jang

A method for fabricating a semiconductor device includes forming an NMOS region and a PMOS region in a substrate, forming a first stack layer including a first gate dielectric layer and a first work function layer that is disposed over the first gate dielectric layer and contains aluminum, over the PMOS region of the substrate, forming a second stack layer including a second gate dielectric layer, a threshold voltage modulation layer that is disposed over the second gate dielectric layer and contains lanthanum, and a second work function layer that is disposed over the threshold voltage modulation layer, over the NMOS region of the substrate, and annealing the first stack layer and the second stack layer, thereby forming a first dipole-interface by diffusion of the aluminum in the first gate dielectric layer and a second dipole-interface by diffusion of the lanthanum in the second gate dielectric layer, respectively.

Semiconductor device including gate structure for threshold voltage modulation in transistors and method for fabricating the same

A method of fabricating a semiconductor device. A substrate (PMOS/NMOS regions) is prepared. A high-k dielectric layer is formed over the substrate. A threshold voltage modulation layer is formed over the dielectric layer of the NMOS region. A first work function layer is formed over the threshold voltage modulation layer and the dielectric layer of the PMOS region. An oxidation suppressing layer is formed over the first work function layer of the NMOS region. A second work function layer is formed over the oxidation suppressing layer and the first work function layer of the PMOS region. A first gate stack including the dielectric layer, the first work function layer and the second work function layer is formed over the PMOS region. A second gate stack including the dielectric layer, the threshold voltage modulation layer, the first work function layer and the oxidation suppressing layer is formed over NMOS region.

Method and gate structure for threshold voltage modulation in transistors

A method for fabricating a semiconductor device includes: forming a gate dielectric layer over a substrate; forming an etch stop layer over the gate dielectric layer; forming a first work function layer that covers a first portion of the etch stop layer and a sacrificial compound that covers a second portion of the etch stop layer; exposing the second portion of the etch stop layer by removing the sacrificial compound; and forming a second work function layer over the second portion of the etch stop layer and the first work function layer.

Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device includes forming a gate dielectric layer over a substrate; forming a metal containing layer, containing an effective work function adjust species, over the gate dielectric layer; forming an anti-reaction layer over the metal containing layer; increasing an amount of the effective work function adjust species contained in the metal containing layer; and forming, on the substrate, a gate stack by etching the anti-reaction layer, the metal containing layer, and the gate dielectric layer.

Semiconductor device with dual work function gate stacks and method for fabricating the same

Provided is a tube railway system that reduces noise and air resistance using a sealed evacuated tube as a passage for a tube railway, thereby allowing a train to run at a higher speed. A vacuum division management system and a vacuum blocking screen device for a tube railway system required to maintain vacuum are provided, in which the vacuum blocking screen device is operated to rapidly block a passage for a tube railway in response to an operation signal, is installed at every certain section or at a designated section of the tube railway, and is operated in a specific section when a vacuum maintenance problem occurs, or when the vacuum needs to be released, or when the train needs to stop immediately, thereby allowing the specific section to be isolated from other sections to have a degree of vacuum different from those of the other sections.

Growing community of inventors

Gyeonggi-do, South Korea

Hyung-Chul Kim