Hyundai Electronics Industries Co. Ltd.

Hyung C Hah

Jung Tae Kim

Yong Ku Baek

Hee K Cheon

A method for depositing a passivation layer on a semiconductor structure having a high resistance value polysilicon layer formed thereon while maintaining the high resistance value thereof and comprises sequentially depositing a silicon oxide layer and a silicon nitride layer, on a high resistance value polysilicon layer of a partially completed semiconductor structure to form a passivation layer thereover. The passivation layer including the silicon oxide layer and the silicon nitride layer is annealed with oxygen plasma in a chamber. The annealed passivation layer is then heated in the presence of a conditioning gas in the chamber to thereby maintaining the resistance of the high resistance value polysilicon layer.

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Kwangmyung-City, South Korea

Hyung C Hah