Hyundai Electronics Industries Co. Ltd.

Hyung Bok Choi

Hyeon Soo Kim

Chang Seo Park

Chan Lim

Han Sang Song

There is disclosed a method of manufacturing a capacitor in a semiconductor device. In a Ta O capacitor using a Ru lower electrode, the method processes the Ru lower electrode at low temperature before a Ta O film of a dielectric film is deposited, so that Ru crystal particles are filled with oxygen atoms to form a good quality RuO . Therefore, the disclosed method can prevent a lift phenomenon of a thin film by prohibiting a stress of the Ta O dielectric film due to RuO generated between the Ta O dielectric film and the Ru lower electrode during the deposition process of a Ta O dielectric and a subsequent annealing process. Also, the disclosed method can prevent diffusion of oxygen atoms and oxidization of a TiN film underlying the Ru film from the Ta O dielectric film. As a result, the method can improve leakage current and electrical characteristics of a capacitor.

Method of manufacturing a capacitor in a semiconductor device

The present invention relates to a method of manufacturing a semiconductor device, which is capable of effectively removing a WO,film generated on a tungsten silicide during contact hole etch that opens a gate electrode including the tungsten silicide as its top film by selectively etching a interlayer insulating film. The WO,film is removed by a washing process using an alkaline solution such as TMAH(tetra-methyl-ammonium-hydroxide) or NH,OH solution. The effective removal of the WO,film reduces the contact resistance between a conductive material layer to be formed in the contact hole by a later process and the gate electrode, thereby improving the operative characteristics of the semiconductor device. TMAH solution used in the washing process has a high selectivity of WO,film relative to a thermal oxide film or a BPSG film that is generally used as the interlayer insulating film. Thus, the present invention is capable of minimizing the damage of the side parts of the interlayer insulating film during the washing process after contact etching.

Method of manufacturing a semiconductor device capable of reducing contact resistance

The present invention relates to a method of manufacturing a semiconductor device, which is capable of effectively removing a WO.sub.3 film generated on a tungsten silicide during contact hole etch that opens a gate electrode including the tungsten silicide as its top film by selectively etching a interlayer insulating film. The WO.sub.3 film is removed by a washing process using an alkaline solution such as TMAH(tetra-methyl-ammonium-hydroxide) or NH.sub.4 OH solution. The effective removal of the WO.sub.3 film reduces the contact resistance between a conductive material layer to be formed in he contact hole by a later process and the gate electrode, thereby improving the operative characteristics of the semiconductor device. TMAH solution used in the washing process has a high selectivity of WO.sub.3 film relative to a thermal oxide film or a BPSG film that is generally used as the interlayer insulating film. Thus, the present invention is capable of minimizing the damage of the side parts of the interlayer insulating film during the washing process after contact etching.

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Sunghnam-Shi, South Korea

Hyung Bok Choi