Intel Corporation

Nexus Photonics LLC

University of California

Juniper Networks, Inc.

Aurrion, Inc.

Other

Hyundai Park

Gregory Alan Fish

Brian Robert Koch

Richard O Jones

Alexander W Fang

John E Bowers

Matthew Sysak

Erik Johan Norberg

John Parker

Jared Bauters

Mario J Paniccia

John Heck

Jonathan Edgar Roth

Tin Komljenovic

Minh Tran

Oded Cohen

Chong Zhang

Hanan Bar

A device providing efficient transformation between an initial optical mode and a second optical mode includes first, second and third elements fabricated on a common substrate. The first element includes first and second active sub-layers supporting initial and final optical modes with efficient mode transformation therebetween. The second element includes a passive waveguide structure supporting a second optical mode. The third element, at least partly butt-coupled to the first element, includes an intermediate waveguide structure supporting an intermediate optical mode. If the final optical mode differs from the second optical mode by more than a predetermined amount, a tapered waveguide structure in the second or third elements facilitates efficient transformation between the intermediate optical mode and the second optical mode. Precise alignment of sub-elements formed in one of the elements, relative to sub-elements formed in another one of the elements, is defined using lithographic alignment marks.

Active-passive photonic integrated circuit platform

Photonically integrated normal incidence photodetectors (NIPDs) and associated in-plane waveguide structures optically coupled to the NIPDs can be configured to allow for both in-plane and normal-incidence detection. In photonic circuits with light-generation capabilities, such as integrated optical transceivers, the ability of the NIPDs to detect in-plane light is used, in accordance with some embodiments, to provide self-test functionality.

Normal incidence photodetector with self-test functionality

An optical device comprises first, second and third elements fabricated on a common substrate. The first element comprises an active waveguide structure supporting a first optical mode, the second element comprises a passive waveguide structure supporting a second optical mode, and the third element, at least partly butt coupled to the first element, comprises an intermediate waveguide structure supporting intermediate optical modes. If the first optical mode differs from the second optical mode by more than a predetermined amount, a tapered waveguide structure in at least one of the second and third elements facilitates efficient adiabatic transformation between the second optical mode and one of the intermediate optical modes. No adiabatic transformation occurs between any of the intermediate optical modes and the first optical mode. Mutual alignments of the first, second and third elements are defined using lithographic alignment marks.

Integrated active devices with improved optical coupling between active and passive waveguides

An optical device comprises first, second and third elements fabricated on a common substrate. The first element comprises an active waveguide structure supporting a first optical mode, the second element comprises a passive waveguide structure supporting a second optical mode, and the third element, at least partly butt coupled to the first element, comprises an intermediate waveguide structure. If the first optical mode differs from the second optical mode by more than a predetermined amount, a tapered waveguide structure in at least one of the second and third elements facilitates efficient adiabatic transformation between the first optical mode and the second optical mode. Mutual alignments of the first, second and third elements are defined using lithographic alignment marks.

Integrated active devices with improved optical coupling to dielectric waveguides

An optical device comprises first, second and third elements fabricated on a common substrate. The first element comprises an active waveguide structure supporting a first optical mode, the second element comprises a passive waveguide structure, characterized by a planar top surface, supporting a second optical mode, and the third element, at least partly butt-coupled to the first element, comprises an intermediate waveguide structure. If the first optical mode differs from the second optical mode by more than a predetermined amount, a tapered waveguide structure in at least one of the second and third elements facilitates efficient adiabatic transformation between the first optical mode and the second optical mode. Mutual alignments of the first, second and third elements are defined using lithographic alignment marks that facilitate precise alignment between layers formed during processing steps of fabricating the first, second and third elements.

Integrated active devices with improved optical coupling to planarized dielectric waveguides

Described herein are lasers comprising an output port to output an optical signal, a plurality of waveguide segments forming an optical cavity length, and a resonant optical cavity comprising the optical cavity length, a gain medium included in the resonant optical cavity to amplify the optical signal, and a heating element disposed near at least two of the plurality of waveguide segments, the heating element controllable to adjust the phase of the optical signal by heating the waveguide segments. Described herein are optical devices comprising a first plurality of ports to output a plurality of optical signals, a second plurality of ports to receive the plurality of optical signals, and a plurality of coupling waveguides. The plurality of waveguide may comprise a pair of adjacent waveguides separated by a first distance, each of the pair of adjacent waveguides comprising a different width.

Densely arrayed waveguides with low cross-coupling

Described are embodiments of apparatuses and systems including a hybrid laser including anti-resonant waveguides, and methods for making such apparatuses and systems. A hybrid laser apparatus may include a first semiconductor region including an active region of one or more layers of semiconductor materials from group III, group IV, or group V semiconductor, and a second semiconductor region coupled with the first semiconductor region and having an optical waveguide, a first trench disposed on a first side of the optical waveguide, and a second trench disposed on a second side, opposite the first side, of the optical waveguide. Other embodiments may be described and/or claimed.

Hybrid laser including anti-resonant waveguides

Described are embodiments of hybrid optical apparatuses including anti-resonant optical waveguides, and methods for making such apparatuses and systems. In one embodiment, a hybrid optical apparatus may include a first semiconductor region including an active region of one or more layers of semiconductor materials and a second semiconductor region coupled with the first semiconductor region. The second semiconductor region may include an optical waveguide configured to transmit light inputted by a light input component. The optical waveguide may be defined by a first trench disposed on a first side of the waveguide, and a second trench disposed on a second side of the waveguide opposite the first side. A width of each trench may vary along a length of the apparatus to control optical power density of the light transmitted along the optical waveguide. Other embodiments may be described and/or claimed.

Hybrid optical apparatuses including optical waveguides

Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in accordance with one or more embodiments of the present invention comprises a silicon-on-insulator substrate, comprising at least one waveguide in a top surface, and a compound semiconductor substrate comprising a gain layer, the compound semiconductor substrate being subjected to a quantum well intermixing process, wherein the upper surface of the compound semiconductor substrate is bonded to the top surface of the silicon-on-insulator substrate.

Hybrid silicon laser-quantum well intermixing wafer bonded integration platform for advanced photonic circuits with electroabsorption modulators

Embodiments of a method comprising guiding an optical mode with an optical waveguide disposed in silicon, overlapping both the optical waveguide and an active semiconductor material evanescently coupled to the optical waveguide with the optical mode guided through the optical waveguide, electrically pumping the active semiconductor material to inject current directed through the active semiconductor material and through the optical mode, and generating light in the active semiconductor material in response to the injected current. Other embodiments are disclosed and claimed.

Method for electrically pumped semiconductor evanescent laser

Described herein is a hybrid III-V Silicon laser comprising a first semiconductor region including layers of semiconductor materials from group III, group IV, or group V semiconductor to form an active region; and a second semiconductor region having a silicon waveguide and bonded to the first semiconductor region via direct bonding at room temperature of a layer of the first semiconductor region to a layer of the second semiconductor region.

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Goleta, CA, United States of America

Hyundai Park