Samsung Electronics Co., Ltd.

Hyunchul Song

Kyungin Choi

Taegon Kim

Sunjung Kim

Seong Hoon Jeong

Changhwa Kim

A semiconductor device includes a substrate including a first active pattern and a second active pattern, a device isolation layer filling a first trench between the first and second active patterns, the device isolation layer including a silicon oxide layer doped with helium, a helium concentration of the device isolation layer being higher than a helium concentration of the first and second active patterns, and a gate electrode crossing the first and second active patterns.

Method of fabricating a semiconductor device

Semiconductor device including a densified device isolation layer

Semiconductor device including patterns and layers having different helium concentrations and method of fabricating the same

Semiconductor devices and methods of forming the semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation layer that defines an active region, an active fin vertically protruding from the active region of the substrate and extending in a horizontal direction, a gate structure traversing the active fin, and a source/drain contact on the active fin on a side of the gate structure. The gate structure may include a gate pattern and a capping pattern on the gate pattern, and the capping pattern may have impurities doped therein. The capping pattern may include a first part and a second part between the first part and the gate pattern. The first and second parts may have impurity concentrations different from each other.

Semiconductor devices and methods of fabricating the same

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Seoul, South Korea

Hyunchul Song