Samsung Electronics Co., Ltd.

Hyunchul Shin

Seung Pil Ko

Wonjun Lee

Woojin Kim

Yongsun Ko

Kilho Lee

Kyungtae Nam

Hyunjin Park

Inseak Hwang

Byoungjae Bae

Jinhye Bae

Shinhee Han

Gawon Lee

Shin Kwon

Yoonsung Han

Hong Hyun Kim

Youngsoo Choi

Changkyu Lee

Kyounghun Ryu

A semiconductor device includes a substrate including a first region and a second region, data storage patterns on the first region and spaced apart from each other in a first direction, an upper insulating layer on the first and second regions and on the data storage patterns, a cell line structure penetrating the upper insulating layer on the first region, extending in the first direction, and electrically connected to the data storage patterns, and an upper connection structure penetrating the upper insulating layer on the second region. The upper connection structure includes an upper conductive line, and upper conductive contacts arranged along a bottom surface of the upper conductive line. The bottom surface of the upper conductive line is located at a height higher than a bottom surface of the cell line structure. A side surface of the cell line structure has a straight line shape continuously-extended.

Semiconductor devices and methods of fabricating the same

Disclosed are a display apparatus, a method of controlling the same, and a recording medium thereof, the display apparatus including: a display; an infrared (IR) receiver; first and second interfaces; and a processor configured to: identify a remote-control code set corresponding to an external apparatus connected to the first interface, convert a first key code included in an IR signal of a remote controller into a second key code corresponding to the identified remote-control code set, based on the IR signal received in the IR receiver, transmit a signal including the converted second key code to the external apparatus through the first interface, and control the display to display an image based on a signal received from the external apparatus through the second interface.

Display apparatus, method of controlling the same, and recording medium thereof

A method of fabricating a semiconductor device includes forming a magnetic tunnel junction layer including a first magnetic layer, a second magnetic layer, and a tunnel barrier layer interposed between the first and second magnetic layers, patterning the magnetic tunnel junction layer to form a magnetic tunnel junction pattern, forming an insulating layer to cover the magnetic tunnel junction pattern, and performing a thermal treatment process to crystallize at least a portion of the first and second magnetic layers. The thermal treatment process may include performing a first thermal treatment process at a first temperature, after the forming of the magnetic tunnel junction layer, and performing a second thermal treatment process at a second temperature, which is higher than or equal to the first temperature, after the forming of the insulating layer.

Method of fabricating semiconductor device

Disclosed are data storage devices and methods of manufacturing the same. The methods may include providing a substrate including a cell region and a peripheral circuit region, forming a data storage layer on the cell region and the peripheral circuit region of the substrate, selectively forming a mask layer on a portion of the data storage layer that is formed on the peripheral circuit region, forming a top electrode layer on the data storage layer and the mask layer, patterning the top electrode layer to form a plurality of top electrodes on the cell region, and patterning the data storage layer using the plurality of top electrodes as an etch mask to form a plurality of data storage parts on the cell region. While patterning the top electrode layer, the mask layer on the peripheral circuit region may serve as an etch stop layer.

Data storage devices and methods of manufacturing the same

Manufacturing a MRAM device may include removing etch residues from a magnetic tunnel junction (MTJ) pattern in the presence of an atmosphere. The removing may include applying a cleaning solution to one or more surfaces of the MTJ pattern. Manufacturing the MRAM device may include removing an oxide layer based on sputter etching of the MTJ pattern. The etch residues may be removed such that the oxide layer is formed. Removing the etch residues may include applying a cleaning solution to the MTJ pattern. The etch residues may be removed in the presence of an atmosphere. The MTJ pattern may be formed based on patterning an MTJ layer in a vacuum state such that the etch residues are formed on a surface of the MTJ pattern.

Magneto-resistance random access memory device and method of manufacturing the same

Growing community of inventors

Seoul, South Korea

Hyunchul Shin