Samsung Display Co., Ltd.

Hyun-Woo Koo

Tae-Woong Kim

Young-Gug Seol

Won-Kyu Kwak

Yang-Wan Kim

Han-Sung Bae

Patrick Jusuck Lee

Young-Ki Hong

Joon-Hoo Choi

Ki-Yong Lee

Dong-Hyun Lee

Jin-O Lim

Jung-Hun Lee

Kil-Won Lee

Jong-Won Hong

Sang-Joon Seo

Seung-Kyu Park

Heung-Yeol Na

Min-Jae Jeong

Hyung-Sik Kim

Byung-Soo So

Hayk Khachatryan

Seok-Rak Chang

Jae-Wan Jung

Yong-Duck Son

Kie-Hyun Nam

Sung-Guk An

Jaemin Lee

Tae-An Seo

Jin-Hwan Choi

Ivan Maidanchuk

Jung-Yong Lee

Jung-Woo Moon

Jeong-Ho Kim

Seonju Jeong

Bo-Ik Park

An anti-scratch film, including a film base and an anti-scratch layer on one side of the film base. The anti-scratch layer includes a plurality of protrusions.

Anti-scratch film for flexible display

A rollable display device includes a rollable structure including a plurality of unit structures, the rollable structure being rollable and unrollable based on the unit structures, and a display panel structure attached to the rollable structure, wherein respective widths of the unit structures increase in a direction from a first side of the rollable structure to a second side of the rollable structure, the first side of the rollable structure being opposite to the second side of the rollable structure, and wherein each of the unit structures includes a metal plate, the metal plate being bent by a bending limit angle in a direction in which the rollable structure is rolled, and a magnetic object on a side region of the metal plate, the magnetic object being magnetically coupled to an adjacent metal plate.

Rollable display device and electronic device including the same

An organic light emitting diode (OLED) display, including a flexible substrate bent in a first direction, an OLED arranged on the flexible substrate, a first thin film transistor connected to the OLED and including a first channel area extending in a second direction crossing the first direction, and one or more additional thin film transistors connected to the first thin film transistor and including corresponding additional channel areas extending in the second direction.

Organic light emitting diode display

A method of manufacturing silver nanowires includes: forming a first solution including a dispersion stabilizer and a polyol; forming a second solution including a dispersion stabilizer, a silver precursor, a halogen-ion donor, deionized water, and the polyol; forming a third solution by adding the second solution to the first solution; heating the third solution from a first temperature to a second temperature; and forming silver nanowires by maintaining the third solution at the second temperature.

Method of manufacturing silver nanowires

An organic light emitting display device and a method of manufacturing the same are proposed. The organic light emitting display device includes: a first film formed of an organic material, and having first and second surfaces facing each other and a third surface perpendicular to the first and second surfaces; a second film formed on the first film to cover the second and third surfaces of the first film; an organic light emitting unit disposed on the second film; a third film disposed on the second film to cover the organic light emitting unit; and a fourth film disposed on the third film, formed of an organic material, and having fourth and fifth surfaces facing each other, wherein the fifth surface faces the third film.

Organic light emitting display device and method of manufacturing the same

An organic light emitting apparatus and a method of manufacturing the organic light emitting apparatus. According to the organic light emitting apparatus and the method of manufacturing the organic light emitting apparatus, the characteristics of a barrier layer are maintained and a stress of a substrate is reduced, even at a high temperature, thereby increasing the manufacturing stability of the organic light emitting apparatus.

Organic light emitting apparatus and method of manufacturing organic light emitting apparatus

A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer including source/drain regions and a channel region on the buffer layer, a gate insulating layer corresponding to the channel region, a gate electrode corresponding to the channel region, and source/drain electrodes electrically connected to the semiconductor layer. A polysilicon layer of the channel region may include only a low angle grain boundary, and a high angle grain boundary may be disposed in a region of the semiconductor layer that is apart from the channel region.

Thin film transistor, organic light emitting diode display device having the same, and method of fabricating the same

Growing community of inventors

Yongin, South Korea

Hyun-Woo Koo